1475 + Mcqs in Electronic Devices McqOptions

1.	The FET is a ________ device depending solely on either electron (n-channel) or hole (p-channel) conduction.
A.	unipolar
B.	bipolar
C.	tripolar
D.	None of the above
Answer» B. bipolar

Discussion

2.	In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the ________ region with the region between cutoff and the saturation level of ID referred to as the ________ region.
A.	depletion, enhancement
B.	enhancement, enhancement
C.	enhancement, depletion
D.	None of the above
Answer» D. None of the above

Discussion

3.	The active region of an FET is bounded by ________.
A.	ohmic region
B.	cutoff region
C.	power line
D.	All of the above
Answer» E.

Discussion

4.	A(n) ________ can be used to check the condition of an FET.
A.	digital display meter (DDM)
B.	ohmmeter (VOM)
C.	curve tracer
D.	All of the above
Answer» D. All of the above

Discussion

5.	The primary difference between the construction of depletion-type and enhancement-type MOSFETs is ________.
A.	the size of the transistor
B.	the absence of the channel
C.	the reverse bias junction
D.	All of the above
Answer» C. the reverse bias junction

Discussion

6.	The transfer curve can be obtained by ________.
A.	using Shockley's equation
B.	using both Shockley's equation and by output characteristics
C.	characteristics
D.	None of the above
Answer» C. characteristics

Discussion

7.	A junction field-effect transistor (JFET) is a ________ device.
A.	current-controlled
B.	voltage-controlled
C.	voltage-current controlled
D.	None of the above
Answer» C. voltage-current controlled

Discussion

8.	The region to the right of the pinch-off locus is commonly referred to as the ________ region.
A.	constant-current
B.	saturation
C.	linear amplification
D.	All of the above
Answer» E.

Discussion

9.	The primary difference between the construction of a MOSFET and an FET is the ________.
A.	construction of the gate connection
B.	low input impedance
C.	threshold voltage
D.	None of the above
Answer» B. low input impedance

Discussion

10.	________ is less dependent on the transistor beta.
A.	Fixed bias
B.	Emitter bias
C.	Voltage divider
D.	Voltage feedback
Answer» D. Voltage feedback

Discussion

11.	In an emitter-bias configuration, the ________ the resistance RE, the ________ the stability factor, and the ________ stable is the system.
A.	smaller, lower, less
B.	larger, more, more
C.	smaller, more, more
D.	larger, lower, more
Answer» E.

Discussion

12.	In a transistor-switching network, the operating point switches from ________ to ________ regions along the load line.
A.	cutoff, active
B.	cutoff, saturation
C.	active, saturation
D.	None of the above
Answer» C. active, saturation

Discussion

13.	A significant increase in leakage current due to increase in temperature creates ________between IB curves.
A.	smaller spacing
B.	larger spacing
C.	the same space as at lower temperature
D.	None of the above
Answer» C. the same space as at lower temperature

Discussion

14.	The saturation current of a transistor used in a fixed-bias circuit is ________ its value used in an emitter-stabilized or voltage-divider bias circuit for the same values of RC.
A.	more than
B.	the same as
C.	less than
D.	None of the above
Answer» B. the same as

Discussion

15.	The ________ configuration has an input impedance, which is other than RG.
A.	common-source
B.	common-gate
C.	common-drain
D.	None of the above
Answer» C. common-drain

Discussion

16.	The Thevenin equivalent network is used in the analysis of the ________ circuit.
A.	fixed bias
B.	emitter-stabilized bias
C.	voltage divider
D.	voltage feedback
Answer» D. voltage feedback

Discussion

17.	The ________the stability factor, the ________sensitive the network is to variations in that parameter.
A.	higher, more
B.	higher, less
C.	lower, more
D.	None of the above
Answer» B. higher, less

Discussion

18.	The dc load line is determined solely by the ________.
A.	base-emitter loop
B.	collector-emitter loop
C.	base-collector loop
D.	None of the above
Answer» C. base-collector loop

Discussion

19.	In a transistor-switching network, the level of the resistance between the collector and emitter is ________ at the saturation and is ________at the cutoff.
A.	low, low
B.	low, high
C.	high, high
D.	high, low
Answer» C. high, high

Discussion

20.	A ________ configuration has a voltage gain less than 1.
A.	fixed-bias
B.	self-bias
C.	source-follower
D.	voltage-divider
Answer» D. voltage-divider

Discussion

21.	The input and output signals are 180 out of phase in a ________ configuration.
A.	source-follower
B.	common-gate
C.	common-drain
D.	voltage-divider
Answer» E.

Discussion

22.	A field-effect transistor amplifier provides excellent voltage gain with the added feature of a ________ input impedance.
A.	low
B.	medium
C.	high
D.	None of the above
Answer» D. None of the above

Discussion

23.	The input and output signals are in phase in a ________ configuration.
A.	fixed-bias
B.	source-follower
C.	voltage-divider
D.	self-bias
Answer» C. voltage-divider

Discussion

24.	The ________ configuration has the distinct disadvantage of requiring two dc voltage sources.
A.	self-bias
B.	voltage-divider
C.	fixed-bias
D.	All of the above
Answer» D. All of the above

Discussion

25.	The depletion MOSFET circuit has a ________ input impedance than a similar JFET configuration.
A.	much higher
B.	much lower
C.	lower
D.	higher
Answer» B. much lower

Discussion

26.	The transconductance gm ________ as the Q-point moves from Vp to IDSS
A.	decreases
B.	remains the same
C.	increases
D.	None of the above
Answer» D. None of the above

Discussion

27.	rd changes from one operation region to another with ________ values typically occurring at ________ levels of VGS (closer to zero).
A.	lower, lower
B.	lower, higher
C.	higher, lower
D.	None of the above
Answer» B. lower, higher

Discussion

28.	The ________ is quite popular in digital circuits, especially in CMOS circuits that require very low power consumption.
A.	JFET
B.	BJT
C.	D-type MOSFET
D.	E-type MOSFET
Answer» E.

Discussion

29.	________ configuration(s) has (have) Zo RD.
A.	Fixed-bias
B.	Self-bias
C.	Voltage-divider
D.	All of the above
Answer» E.

Discussion

30.	The ________ transistor has become one of the most important devices used in the design and construction of integrated circuits for digital computers.
A.	MOSFET
B.	BJT
C.	JFET
D.	None of the above
Answer» B. BJT

Discussion

31.	VMOS FETs have a ________ temperature coefficient that will combat the possibility of thermal runaway.
A.	positive
B.	negative
C.	zero
D.	None of the above
Answer» B. negative

Discussion

32.	In a fixed-bias circuit with a fixed supply voltage VCC, the selection of a ________ resistor sets the level of ________ current for the operating point.
A.	collector, base
B.	base, base
C.	collector, collector
D.	None of the above
Answer» C. collector, collector

Discussion

33.	________ should be considered in the analysis or design of any electronic amplifiers.
A.	dc
B.	ac
C.	dc and ac
D.	None of the above
Answer» D. None of the above

Discussion

34.	By definition, quiescent means ________.
A.	quiet
B.	still
C.	inactive
D.	All of the above
Answer» E.

Discussion

35.	As the temperature increases, ________, VBE ________, and ICO ________ in value for every 10 C.
A.	increases, decreases, doubles
B.	decreases, increases, remains the same
C.	decreases, increases, doubles
D.	increases, increases, triples
Answer» B. decreases, increases, remains the same

Discussion

36.	A clamping network must have ________.
A.	a capacitor
B.	a diode
C.	a resistive element
D.	All of the above
Answer» E.

Discussion

37.	With the Zener diode in the "on" state, increasing IL will ________ IZ and ________IR.
A.	decrease, increase
B.	increase, decrease
C.	decrease, keep the same level of
D.	increase, keep the same level of
Answer» D. increase, keep the same level of

Discussion

38.	A single diode in a half-wave rectifier conducts for 180 of the input cycle.
A.	True
B.	False
Answer» B. False

Discussion

39.	Diode limiters add a dc level to an ac signal.
A.	True
B.	False
Answer» C.

Discussion

40.	In a diode clamper, the capacitor retains a charge approximately equal to the peak value of the input.
A.	True
B.	False
Answer» B. False

Discussion

41.	Zener diodes are used in regulator networks to ________.
A.	generate voltage
B.	consume power
C.	maintain a fixed voltage across the load resistor
D.	protect the load
Answer» D. protect the load

Discussion

42.	For the ideal diode the transition between states will occur at the point on the characteristic curve when VD = ________ V and ID = ________ A.
A.	0.3, 0
B.	0, 0
C.	0.7, 0
D.	0.7, 0.3
Answer» C. 0.7, 0

Discussion

43.	A Zener diode is in a ________ impedance region in the forward bias while it has a ________ impedance region in the reverse bias.
A.	very large, low
B.	very large, very large
C.	low, low
D.	low, very large
Answer» E.

Discussion

44.	The movement of free electrons in a semiconductor material is termed electron voltage.
A.	True
B.	False
Answer» C.

Discussion

45.	The source voltage must be ________ the voltage drop across the diode to conduct the diode.
A.	larger than
B.	smaller than
C.	the same as
D.	None of the above
Answer» B. smaller than

Discussion

46.	The process of removing one-half the input signal to establish a dc level is called ________.
A.	rectifier
B.	full-wave rectifier
C.	half-wave rectifier
D.	filtering
Answer» D. filtering

Discussion

47.	The ratio of the total swing of the output of a clamper to its input total swing is ________.
A.	1
B.	2
C.	0.5
D.	0
Answer» B. 2

Discussion

48.	The PIV rating of the diodes in a full-wave rectifier must be larger than ________ Vm.
A.	0.318
B.	0.636
C.	2
D.	1
Answer» E.

Discussion

49.	In this voltage multiplier, measuring from the top of the transformer winding will provide ________ multiples of Vm at the output, whereas measuring the output voltage from the bottom of the transformer will provide ________ multiples of the peak Vm.
A.	odd, even
B.	even, odd
C.	odd, odd
D.	even, even
Answer» B. even, odd

Discussion

50.	The intersection of the load line with the characteristic curve determines the ________ of the system.
A.	point of operation
B.	load-line analysis
C.	characteristic curve
D.	forward bias
Answer» B. load-line analysis

Discussion

Explore topic-wise MCQs in Testing Subject.

The FET is a ________ device depending solely on either electron (n-channel) or hole (p-channel) conduction.

In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the ________ region with the region between cutoff and the saturation level of ID referred to as the ________ region.

The active region of an FET is bounded by ________.

A(n) ________ can be used to check the condition of an FET.

The primary difference between the construction of depletion-type and enhancement-type MOSFETs is ________.

The transfer curve can be obtained by ________.

A junction field-effect transistor (JFET) is a ________ device.

The region to the right of the pinch-off locus is commonly referred to as the ________ region.

The primary difference between the construction of a MOSFET and an FET is the ________.

________ is less dependent on the transistor beta.

In an emitter-bias configuration, the ________ the resistance RE, the ________ the stability factor, and the ________ stable is the system.

In a transistor-switching network, the operating point switches from ________ to ________ regions along the load line.

A significant increase in leakage current due to increase in temperature creates ________between IB curves.

The saturation current of a transistor used in a fixed-bias circuit is ________ its value used in an emitter-stabilized or voltage-divider bias circuit for the same values of RC.

The ________ configuration has an input impedance, which is other than RG.

The Thevenin equivalent network is used in the analysis of the ________ circuit.

The ________the stability factor, the ________sensitive the network is to variations in that parameter.

The dc load line is determined solely by the ________.

In a transistor-switching network, the level of the resistance between the collector and emitter is ________ at the saturation and is ________at the cutoff.

A ________ configuration has a voltage gain less than 1.

The input and output signals are 180 out of phase in a ________ configuration.

A field-effect transistor amplifier provides excellent voltage gain with the added feature of a ________ input impedance.

The input and output signals are in phase in a ________ configuration.

The ________ configuration has the distinct disadvantage of requiring two dc voltage sources.

The depletion MOSFET circuit has a ________ input impedance than a similar JFET configuration.

The transconductance gm ________ as the Q-point moves from Vp to IDSS

rd changes from one operation region to another with ________ values typically occurring at ________ levels of VGS (closer to zero).

The ________ is quite popular in digital circuits, especially in CMOS circuits that require very low power consumption.

________ configuration(s) has (have) Zo RD.

The ________ transistor has become one of the most important devices used in the design and construction of integrated circuits for digital computers.

VMOS FETs have a ________ temperature coefficient that will combat the possibility of thermal runaway.

In a fixed-bias circuit with a fixed supply voltage VCC, the selection of a ________ resistor sets the level of ________ current for the operating point.

________ should be considered in the analysis or design of any electronic amplifiers.

By definition, quiescent means ________.

As the temperature increases, ________, VBE ________, and ICO ________ in value for every 10 C.

A clamping network must have ________.

With the Zener diode in the "on" state, increasing IL will ________ IZ and ________IR.

A single diode in a half-wave rectifier conducts for 180 of the input cycle.

Diode limiters add a dc level to an ac signal.

In a diode clamper, the capacitor retains a charge approximately equal to the peak value of the input.

Zener diodes are used in regulator networks to ________.

For the ideal diode the transition between states will occur at the point on the characteristic curve when VD = ________ V and ID = ________ A.

A Zener diode is in a ________ impedance region in the forward bias while it has a ________ impedance region in the reverse bias.

The movement of free electrons in a semiconductor material is termed electron voltage.

The source voltage must be ________ the voltage drop across the diode to conduct the diode.

The process of removing one-half the input signal to establish a dc level is called ________.

The ratio of the total swing of the output of a clamper to its input total swing is ________.

The PIV rating of the diodes in a full-wave rectifier must be larger than ________ Vm.

In this voltage multiplier, measuring from the top of the transformer winding will provide ________ multiples of Vm at the output, whereas measuring the output voltage from the bottom of the transformer will provide ________ multiples of the peak Vm.

The intersection of the load line with the characteristic curve determines the ________ of the system.

In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the region with the region between cutoff and the saturation level of ID referred to as the region.

In an emitter-bias configuration, the the resistance RE, the the stability factor, and the stable is the system.

In a transistor-switching network, the operating point switches from to regions along the load line.

The the stability factor, the sensitive the network is to variations in that parameter.

In a transistor-switching network, the level of the resistance between the collector and emitter is at the saturation and is at the cutoff.

rd changes from one operation region to another with values typically occurring at levels of VGS (closer to zero).

In a fixed-bias circuit with a fixed supply voltage VCC, the selection of a resistor sets the level of current for the operating point.

As the temperature increases, , VBE , and ICO in value for every 10 C.

With the Zener diode in the "on" state, increasing IL will IZ and IR.

For the ideal diode the transition between states will occur at the point on the characteristic curve when VD = V and ID = A.

A Zener diode is in a impedance region in the forward bias while it has a impedance region in the reverse bias.

In this voltage multiplier, measuring from the top of the transformer winding will provide multiples of Vm at the output, whereas measuring the output voltage from the bottom of the transformer will provide multiples of the peak Vm.