MCQOPTIONS
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MCQOPTIONS
This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Manufacturing Processes knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
A_PRE-TREATMENT_BY_A_LITHOGRAPHIC_PATTERNING_STAGE_ENABLES_THE_PRODUCTION_OF_ORDERED_PORE_DISTRIBUTION.?$ |
| A. | True |
| B. | False |
| Answer» B. False | |
| 2. |
Among_all_the_etching_parameters,_the_etching_current_density_(J)_is_the_most_critical_factor.$ |
| A. | True |
| B. | False |
| Answer» B. False | |
| 3. |
For a given level of doping, the growth of MpSi in n-type silicon substrates can be controlled by____? |
| A. | amount of electric current passed |
| B. | current density |
| C. | voltage drop |
| D. | processing time |
| Answer» C. voltage drop | |
| 4. |
The neutral state is achieved when the concentration of electrons is equal to the concentration of electronic holes and ionized donors. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 5. |
In the pore formation mechanism of MpSi, electronic holes initiate the dissolution process of silicon. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 6. |
The enhanced electric field and tunnelling mechanisms are associated with the formation of _____ structures. |
| A. | mpSi |
| B. | MpSi |
| C. | μpSi |
| D. | pSi |
| Answer» B. MpSi | |
| 7. |
_____ mechanism is associated with the pore formation in μpSi structures.$ |
| A. | Enhanced electric field |
| B. | Tunnelling |
| C. | Quantum confinement |
| D. | Space-charge limited mechanism |
| Answer» E. | |
| 8. |
Why the pore characteristics of the resulting pSi structures depend upon the doping type? Choose the most correct option. |
| A. | Processing time depends on doping |
| B. | The manufacturing process is selected on the basis of doping |
| C. | The pore formation mechanism relies on doping |
| D. | Atomic size of doping atom affects the final structure |
| Answer» D. Atomic size of doping atom affects the final structure | |
| 9. |
The resulting pore structure in pSi is intrinsically dependent on the doping level of the Si wafer. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 10. |
Morphology of μpSi and mpSi can be defined by a concrete spatial distribution. |
| A. | True |
| B. | False |
| Answer» C. | |