When the doping density in the silicon wafer is increased, then _____

width of depletion region is increased

electric field strength is increased

width of depletion region is increased

hinderance to charge carries is increased

quality of the product is increased

Bending curvature of silicon wafers varies ______ with the specific area of the MpSi structure.

it not affected by specific area

Explore topic-wise MCQs in Manufacturing Processes.

This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Manufacturing Processes knowledge and support exam preparation. Choose a topic below to get started.

1.	In the beginning of the electrochemical etching, some of these pits present on the surface of the silicon wafer develop into mesopores.
A.	True
B.	False
Answer» B. False

Discussion

2.	The electric field strength decreases around the depressions present on the silicon wafer surface.
A.	True
B.	False
Answer» C.

Discussion

3.	Avalanche breakdown is the dominant mechanism at high doping densities.
A.	True
B.	False
Answer» C.

Discussion

4.	When the doping density in the silicon wafer is increased, then _____
A.	electric field strength is increased
B.	width of depletion region is increased
C.	hinderance to charge carries is increased
D.	quality of the product is increased
Answer» B. width of depletion region is increased

Discussion

5.	Arrays of cone-like silicon dioxide pillars can be produced using _____
A.	truncated MpSi
B.	conical MpSi
C.	cylindrical MpSi
D.	planner MpSi
Answer» C. cylindrical MpSi

Discussion

6.	It possible to produce arrays of silicon dioxide pillars inside _____
A.	long pipes
B.	spherical cavities
C.	truncated pyramids
D.	thin shells
Answer» D. thin shells

Discussion

7.	Lithographic technique can be used for patterning the Si wafer.
A.	True
B.	False
Answer» B. False

Discussion

8.	Length of the silicon dioxide pillars is dependant on the etching time and the pore length.
A.	True
B.	False
Answer» B. False

Discussion

9.	Silicon oxide layer can be removed using HF solution.
A.	True
B.	False
Answer» B. False

Discussion

10.	Bending curvature of silicon wafers varies ______ with the specific area of the MpSi structure.
A.	linearly
B.	inversely
C.	cubically
D.	it not affected by specific area
Answer» B. inversely

Discussion

Explore topic-wise MCQs in Manufacturing Processes.

In the beginning of the electrochemical etching, some of these pits present on the surface of the silicon wafer develop into mesopores.

The electric field strength decreases around the depressions present on the silicon wafer surface.

Avalanche breakdown is the dominant mechanism at high doping densities.

When the doping density in the silicon wafer is increased, then _____

Arrays of cone-like silicon dioxide pillars can be produced using _____

It possible to produce arrays of silicon dioxide pillars inside _____

Lithographic technique can be used for patterning the Si wafer.

Length of the silicon dioxide pillars is dependant on the etching time and the pore length.

Silicon oxide layer can be removed using HF solution.

Bending curvature of silicon wafers varies ______ with the specific area of the MpSi structure.