MCQOPTIONS
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MCQOPTIONS
This section includes 5 Mcqs, each offering curated multiple-choice questions to sharpen your Manufacturing Processes knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Among all the etching parameters, the etching current density (J) is the most critical factor. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 2. |
A pre-treatment by a lithographic patterning stage enables the production of ordered pore distribution. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 3. |
For a given level of doping, the growth of MpSi in n-type silicon substrates can be controlled by_____ |
| A. | amount of electric current passed |
| B. | current density |
| C. | voltage drop |
| D. | processing time |
| Answer» C. voltage drop | |
| 4. |
_____ mechanism is associated with the pore formation in pSi structures. |
| A. | Enhanced electric field |
| B. | Tunnelling |
| C. | Quantum confinement |
| D. | Space-charge limited mechanism |
| Answer» E. | |
| 5. |
Morphology of pSi and mpSi can be defined by a concrete spatial distribution. |
| A. | True |
| B. | False |
| Answer» C. | |