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This section includes 13 Mcqs, each offering curated multiple-choice questions to sharpen your Manufacturing Processes knowledge and support exam preparation. Choose a topic below to get started.
1. |
Porous silicon can be used as carriers for drug delivery. |
A. | True |
B. | False |
Answer» B. False | |
2. |
At high aspect ratio, silicon nanowires tend to form bundles. |
A. | True |
B. | False |
Answer» B. False | |
3. |
Nanosphere lithography method is another lithographic approach extensively used to produce pSi structures. |
A. | True |
B. | False |
Answer» B. False | |
4. |
The NAA approach can produce silicon nano-wires of _____ cross-section. |
A. | triangular |
B. | circular |
C. | square |
D. | needle like |
Answer» C. square | |
5. |
Self-ordered NAA structures do not present any defects and domains. |
A. | True |
B. | False |
Answer» B. False | |
6. |
The use of NAA mask technique to produce pSi structures need simple wet chemistry laboratory. |
A. | True |
B. | False |
Answer» B. False | |
7. |
In the aforementioned approach (modified approach), which of the following metals is used? |
A. | V |
B. | Cr |
C. | Pt |
D. | Ag |
Answer» B. Cr | |
8. |
The pores produced by RIE etching can have a thin defective region. |
A. | True |
B. | False |
Answer» B. False | |
9. |
The geometric features of the resulting silicon nanowires are independent of the noble-metal thickness. |
A. | True |
B. | False |
Answer» B. False | |
10. |
The NAA technique can produce silicon nano wires with high crystalline quality. |
A. | True |
B. | False |
Answer» B. False | |
11. |
Pore sizes in NAA can range from ____ |
A. | 10 100 nm |
B. | 20 250 nm |
C. | 20 400 nm |
D. | 100 550 nm |
Answer» D. 100 550 nm | |
12. |
In IL technique, nanopores are produced by application of current and voltage. |
A. | True |
B. | False |
Answer» B. False | |
13. |
In interference lithography (IL) technique, aluminium is used as anode. |
A. | True |
B. | False |
Answer» B. False | |