Explore topic-wise MCQs in Electronic Devices Circuits.

This section includes 15 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices Circuits knowledge and support exam preparation. Choose a topic below to get started.

1.

Which of the below issues may not be experienced when using MOSFETs?

A. Weak avalanche
B. Velocity saturation
C. Punch-through
D. All of the mentioned
Answer» E.
Discussion
2.

In MOSFETs a breakdown may occur at around 30 V. This is due to

A. Velocity saturation
B. Breakdown of the gate diode
C. Sudden decrease in the depletion region
D. Fall of the threshold voltage due to impurities
Answer» C. Sudden decrease in the depletion region
Discussion
3.

At ______________ the drain current is no longer related to the Vgs by square law relationship.

A. When the temperature is high (around 700 Celsius)
B. When temperature is very low (around -50 Celsius)
C. Velocity saturation
D. None of the mentioned
Answer» D. None of the mentioned
Discussion
4.

The threshold voltage is

A. Increases on increasing temperature
B. May increase or decrease on increasing temperature depending upon other factors
C. Temperature independent
D. Decreases on increasing temperature
Answer» E.
Discussion
5.

An NMOS transistor has Vt0 = 0.8 V, 2 φf = 0.7 V, and γ = 0.4 V1/2. Find Vt when VSB = 3 V.

A. 0.12 V
B. 1.23 V
C. 2.34 V
D. 3.45 V
Answer» C. 2.34 V
Discussion
6.

WHICH_OF_THE_BELOW_ISSUES_MAY_NOT_BE_EXPERIENCED_WHEN_USING_MOSFETS??$

A. Weak avalanche
B. Velocity saturation
C. Punch-through
D. All of the mentioned
Answer» E.
Discussion
7.

IN_MOSFETS_A_BREAKDOWN_MAY_OCCUR_AT_AROUND_30_V._THIS_IS_DUE_TO?$

A. Velocity saturation
B. Breakdown of the gate diode
C. Sudden decrease in the depletion region
D. Fall of the threshold voltage due to impurities
Answer» C. Sudden decrease in the depletion region
Discussion
8.

At ______________ the drain current is no longer related to the Vgs by square law relationship?

A. When the temperature is high (around 700 Celsius)
B. When temperature is very low (around -50 Celsius)
C. Velocity saturation
D. None of the mentioned
Answer» D. None of the mentioned
Discussion
9.

A breakdown effect that occurs in modern devices at low voltages (of around 20 V) is

A. Weak avalanche
B. Strong avalanche
C. Weak storm
D. Punch-through
Answer» E.
Discussion
10.

As the voltage on the drain is increased, a value is reached at which the pn junction between the drain region and substrate suffers avalanche breakdown known as

A. Weak avalanche
B. Strong avalanche
C. Weak storm
D. Punch-through
Answer» B. Strong avalanche
Discussion
11.

The threshold voltage is

A. Increases on increasing temperature
B. May increase or decrease on increasing temperature depending upon other factors
C. Temperature independent
D. Decreases on increasing temperature
Answer» E.
Discussion
12.

An NMOS transistor has Vt0 = 0.8 V, 2 φf = 0.7 V, and γ = 0.4 V1/2. Find Vt when VSB = 3 V.$

A. 0.12 V
B. 1.23 V
C. 2.34 V
D. 3.45 V
Answer» C. 2.34 V
Discussion
13.

The SI units of the body effect parameter is

A. Volt
B. Volt X Volt
C. ‚àöVolt
D. It has no units
Answer» D. It has no units
Discussion
14.

The variation of the threshold voltage with the applied bulk-to-source voltage is typically observed by plotting the _________________ as a function of the source-to-drain voltage.

A. drain current
B. square root of the drain current
C. square of the drain current
D. natural logarithm of the drain current
Answer» C. square of the drain current
Discussion
15.

The _____________ of a MOSFET is affected by the voltage which is applied to the back contact.

A. Threshold Voltage
B. Output Voltage
C. Both threshold and output voltage
D. Neither of the threshold nor the output voltage
Answer» B. Output Voltage
Discussion