Explore topic-wise MCQs in Electronic Devices and Circuits.

This section includes 6 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits knowledge and support exam preparation. Choose a topic below to get started.

Explore topic-wise MCQs in Electronic Devices and Circuits.

A depletion type N channel MOSFEt with knW/L = 2 mA/V2 and Vt = 3V has its source and gate grounded. For Vd = 0.1V and neglecting channel length modulating effect. In which region is the triode operating?

A depletion type N channel MOSFEt with knW/L = 2 mA/V2 and Vt = 3V has its source and gate grounded. For Vd = 0.1V and neglecting channel length modulating effect. Find drain current.

For a particular depletion mode NMOS device, Vt = -2V, kn W/L = 200 A/V2 and = 0.02V-1. For VDS = 2V. What is the value of the drain current if both L and W are doubled?

For a particular depletion mode NMOS device, Vt = -2V, kn W/L = 200 A/V2 and = 0.02V-1. For VDS = 2V. What is the drain current that flows

A discrete MOSFET common source amplifier has Rin = 2 M , gmm = 4mA/V, ro = 100 k , RD = 10 k , Cgs = 2pF and Cgd = 0.5pF. The amplifier is fed from a voltage source with an internal resistance of 500 k and Is connected to the a load of 10 k . The upper 3-db frequency fH is?

A discrete MOSFET common source amplifier has Rin = 2 M , gmm = 4mA/V, ro = 100 k , RD = 10 k , Cgs = 2pF and Cgd = 0.5pF. The amplifier is fed from a voltage source with an internal resistance of 500 k and Is connected to the a load of 10 k . The value of the overall mixed gain AM is?

A depletion type N channel MOSFEt with k_nW/L = 2 mA/V² and V_t = 3V has its source and gate grounded. For V_d = 0.1V and neglecting channel length modulating effect. In which region is the triode operating?

A depletion type N channel MOSFEt with k_nW/L = 2 mA/V² and V_t = 3V has its source and gate grounded. For V_d = 0.1V and neglecting channel length modulating effect. Find drain current.

For a particular depletion mode NMOS device, V_t = -2V, k_n W/L = 200 A/V² and = 0.02V^-1. For V_DS = 2V. What is the value of the drain current if both L and W are doubled?

For a particular depletion mode NMOS device, V_t = -2V, k_n W/L = 200 A/V² and = 0.02V^-1. For V_DS = 2V. What is the drain current that flows

A discrete MOSFET common source amplifier has R_in = 2 M , g_mm = 4mA/V, r_o = 100 k , R_D = 10 k , C_gs = 2pF and C_gd = 0.5pF. The amplifier is fed from a voltage source with an internal resistance of 500 k and Is connected to the a load of 10 k . The upper 3-db frequency f_H is?

A discrete MOSFET common source amplifier has R_in = 2 M , g_mm = 4mA/V, r_o = 100 k , R_D = 10 k , C_gs = 2pF and C_gd = 0.5pF. The amplifier is fed from a voltage source with an internal resistance of 500 k and Is connected to the a load of 10 k . The value of the overall mixed gain A_M is?