A depletion type N channel MOSFEt with knW/L = 2 mA/V2 and Vt = 3V has – McqOptions

MCQOPTIONS

1.	A depletion type N channel MOSFEt with k_nW/L = 2 mA/V² and V_t = 3V has its source and gate grounded. For V_d = 0.1V and neglecting channel length modulating effect. Find drain current.
A.	1.18 mA
B.	0.89 mA
C.	0.59 mA
D.	0.3 mA
Answer» C. 0.59 mA

Discussion

No Comment Found

Related MCQs

A depletion type N channel MOSFEt with k<sub>n</sub>W/L = 2 mA/V<sup>2</sup> and V<sub>t</sub> = 3V has its source and gate grounded. For V<sub>d</sub> = 0.1V and neglecting channel length modulating effect. In which region is the triode operating?
A depletion type N channel MOSFEt with k<sub>n</sub>W/L = 2 mA/V<sup>2</sup> and V<sub>t</sub> = 3V has its source and gate grounded. For V<sub>d</sub> = 0.1V and neglecting channel length modulating effect. Find drain current.
For a particular depletion mode NMOS device, V<sub>t</sub> = -2V, k<sub>n</sub> W/L = 200 A/V<sup>2</sup> and = 0.02V<sup>-1</sup>. For V<sub>DS</sub> = 2V. What is the value of the drain current if both L and W are doubled?
For a particular depletion mode NMOS device, V<sub>t</sub> = -2V, k<sub>n</sub> W/L = 200 A/V<sup>2</sup> and = 0.02V<sup>-1</sup>. For V<sub>DS</sub> = 2V. What is the drain current that flows
A discrete MOSFET common source amplifier has R<sub>in</sub> = 2 M , g<sub>m</sub>m = 4mA/V, r<sub>o</sub> = 100 k , R<sub>D</sub> = 10 k , C<sub>gs</sub> = 2pF and C<sub>gd</sub> = 0.5pF. The amplifier is fed from a voltage source with an internal resistance of 500 k and Is connected to the a load of 10 k . The upper 3-db frequency f<sub>H</sub> is?
A discrete MOSFET common source amplifier has R<sub>in</sub> = 2 M , g<sub>m</sub>m = 4mA/V, r<sub>o</sub> = 100 k , R<sub>D</sub> = 10 k , C<sub>gs</sub> = 2pF and C<sub>gd</sub> = 0.5pF. The amplifier is fed from a voltage source with an internal resistance of 500 k and Is connected to the a load of 10 k . The value of the overall mixed gain A<sub>M</sub> is?