MCQOPTIONS
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MCQOPTIONS
This section includes 6 Mcqs, each offering curated multiple-choice questions to sharpen your Linear Integrated Circuit knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
If the thickness of wafer after all polishing steps in silicon wafer preparation is 23-40 mils. Find its raw cut slice thickness? |
| A. | 16-32 mils |
| B. | 23-40 mils |
| C. | 8-12 mils |
| D. | None of the mentioned |
| Answer» B. 23-40 mils | |
| 2. |
How to obtain silicon ingots of 10-15cm diameter? |
| A. | By crystal pulling process |
| B. | By crystal melting process |
| C. | By crystal growing process |
| D. | All of the mentioned |
| Answer» B. By crystal melting process | |
| 3. |
In Crzochralski crystal growth process, the materials are heated up to |
| A. | 950<sup>o</sup>c |
| B. | 1000 <sup>o</sup>c |
| C. | 1420<sup>o</sup>c |
| D. | 1200<sup>o</sup>c |
| Answer» D. 1200<sup>o</sup>c | |
| 4. |
Oxidation process in silicon planar technology is also called as |
| A. | Photo oxidation |
| B. | Silicon oxidation |
| C. | Vapour oxidation |
| D. | Thermal oxidation |
| Answer» E. | |
| 5. |
At what temperature should the oxidation process be carried out to get an oxide film of thickness 0.02 to 2 m? |
| A. | 0-105<sup>o</sup>c |
| B. | 950-1115<sup>o</sup>c |
| C. | 200-850<sup>o</sup>c |
| D. | 350-900<sup>o</sup>c |
| Answer» C. 200-850<sup>o</sup>c | |
| 6. |
Find the basic chemical reaction used for Epitaxial growth? |
| A. | Sic<sub>4</sub> + 4H ( longleftrightarrow ) Si + 4Hcl |
| B. | Sic<sub>2</sub> + H<sub>2</sub> ( longleftrightarrow ) Si + 2Hcl |
| C. | Sic<sub>4</sub> + H<sub>2</sub> ( longleftrightarrow ) Si + 4Hcl |
| D. | 2Sic<sub>2</sub> + 2H<sub>2</sub> ( longleftrightarrow ) 4Si + Hcl |
| Answer» D. 2Sic<sub>2</sub> + 2H<sub>2</sub> ( longleftrightarrow ) 4Si + Hcl | |