MCQOPTIONS
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MCQOPTIONS
This section includes 15 Mcqs, each offering curated multiple-choice questions to sharpen your Microwave Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
A tunnel diode is a p-n junction diode with a doping profile that allows electron tunneling through a narrow energy band gap. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 2. |
The most important functional unit of a spectrum analyzer is: |
| A. | Mixer |
| B. | IF amplifier |
| C. | Sensitive receiver |
| D. | None of the mentioned |
| Answer» D. None of the mentioned | |
| 3. |
_________ gives a frequency domain representation of a signal, displaying the average power density versus frequency. |
| A. | CRO |
| B. | Oscilloscope |
| C. | Spectrum analyzer |
| D. | Network analyzer |
| Answer» D. Network analyzer | |
| 4. |
A major disadvantage of TRAPATT diode is: |
| A. | Fabrication is costly |
| B. | Low operational bandwidth |
| C. | Low gain |
| D. | High noise figure |
| Answer» E. | |
| 5. |
TRAPATT diode is normally mounted at a point inside a coaxial resonator where there is minimum RF voltage swing. |
| A. | True |
| B. | False |
| Answer» C. | |
| 6. |
__________GIVES_A_FREQUENCY_DOMAIN_REPRESENTATION_OF_A_SIGNAL,_DISPLAYING_THE_AVERAGE_POWER_DENSITY_VERSUS_FREQUENCY.?$ |
| A. | CRO |
| B. | Oscilloscope |
| C. | Spectrum analyzer |
| D. | Network analyzer |
| Answer» D. Network analyzer | |
| 7. |
A tunnel diode is a p-n junction diode with a doping profile that allows electron tunneling through a narrow energy band gap.$ |
| A. | True |
| B. | False |
| Answer» B. False | |
| 8. |
The_most_important_functional_unit_of_a_spectrum_analyzer_is:$ |
| A. | Mixer |
| B. | IF amplifier |
| C. | Sensitive receiver |
| D. | None of the mentioned |
| Answer» D. None of the mentioned | |
| 9. |
TRAPATT diode is normally mounted at a point inside a coaxial resonator where there is minimum RF voltage swing. |
| A. | True |
| B. | False |
| Answer» C. | |
| 10. |
In order to achieve high current density, a compromise in _______is made in a TRAPATT diode. |
| A. | Gain |
| B. | Size |
| C. | Operating frequency |
| D. | No compromise is made on any of the parameter |
| Answer» D. No compromise is made on any of the parameter | |
| 11. |
The number of semiconductor layers in a TRAPATT diode is: |
| A. | Two |
| B. | Three |
| C. | Four |
| D. | One |
| Answer» C. Four | |
| 12. |
As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode: |
| A. | Increases |
| B. | Decreases |
| C. | Remains unchanged |
| D. | None of the mentioned |
| Answer» C. Remains unchanged | |
| 13. |
Advantage of Schottky diode over silicon crystal diode is the presence minority charge carriers. |
| A. | True |
| B. | False |
| Answer» C. | |
| 14. |
Schottky barrier diode is a sophisticated version of the point contact ______________ |
| A. | Germanium diode |
| B. | Silicon crystal diode |
| C. | GaAs diode |
| D. | None of the mentioned |
| Answer» C. GaAs diode | |
| 15. |
Classical p-n junction diode cannot be used for high frequency applications because of: |
| A. | High bias voltage |
| B. | High junction capacitance |
| C. | Frequency sensitive |
| D. | High forward biased current |
| Answer» C. Frequency sensitive | |