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Kunti Loke
Asked: 2022-11-09T16:06:40+05:30 In:

Pure Si at 300 K has equal electron (ni) and hole concentration (p) of 1.5 X 10^16 m^-3. Doping by indium increases p to 4.5 X 10^22 m^-3. What is n in the doped silicon?

(a) 4.5 X 10^9 m^-3

(b) 4.5 X 10^22 m^-3

(c) 5 X 10^9 m^-3

(d) 5 X 10^22 m^-3

Pure Si at 300 K has equal electron (ni) and hole concentration (p) of 1.5 X 10^16 m^-3. Doping by indium increases p to 4.5 X 10^22 m^-3. What is n in the doped silicon?

(a) 4.5 X 10^9 m^-3

(b) 4.5 X 10^22 m^-3

(c) 5 X 10^9 m^-3

(d) 5 X 10^22 m^-3
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1 Answer

  1. The correct choice is (c) 5 X 10^9 m^-3

    Best explanation: Here, ni = 1.5 X 10^16 m^-3, p = 4.5 X 10^22 m^-3

    We know, np = ni^2

    n = ni^2/p

    = 5 X 10^9 m^-3.

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