Thermal runaway in a transistor biased in the active region is primarily due toa) heating of the transistorb) changes in β, which increases with temperaturec) base emitter voltage VBE which decreases with rise in temperatured) change in reverse saturation current due to rise in temperatureWhich of the following options is correct?

Thermal runaway in a transistor biased in the active region is primari

1.	Thermal runaway in a transistor biased in the active region is primarily due toa) heating of the transistorb) changes in β, which increases with temperaturec) base emitter voltage VBE which decreases with rise in temperatured) change in reverse saturation current due to rise in temperatureWhich of the following options is correct?
A.	and b) are correct
B.	and b) are correct
C.	is correct and d) is wrong
D.	is wrong and d) is correct
Answer» E.