The Debye length LD is a characteristic length for semiconductor and is defined as1. \(L_D = \sqrt{\frac{ϵ_s KT}{qN}}\)2. \(L_D = \sqrt{\frac{ϵ_s KT}{q^2N}}\)3. \(L_D = \sqrt{\frac{2ϵ_s KT}{q^2N}}\)4. \(L_D = \sqrt{\frac{ϵ_s KT}{2qN}}\)where. K is Boltzmann constant, T is temperature in Kelvin, q is unit electronic charge. N is impurity concentration of the substrate in per m3, ϵs is dielectric permittivity of silicon.

The Debye length LD is a characteristic length for semiconductor and

1.	The Debye length LD is a characteristic length for semiconductor and is defined as1. \(L_D = \sqrt{\frac{ϵ_s KT}{qN}}\)2. \(L_D = \sqrt{\frac{ϵ_s KT}{q^2N}}\)3. \(L_D = \sqrt{\frac{2ϵ_s KT}{q^2N}}\)4. \(L_D = \sqrt{\frac{ϵ_s KT}{2qN}}\)where. K is Boltzmann constant, T is temperature in Kelvin, q is unit electronic charge. N is impurity concentration of the substrate in per m3, ϵs is dielectric permittivity of silicon.
A.	1
B.	2
C.	3
D.	4
Answer» C. 3