Pure Si at 300 K has equal electron (ni) and hole concentration (p) of 1.5 X 1016 m-3. Doping by indium increases p to 4.5 X 1022 m-3. What is n in the doped silicon?

• A. 4.5 X 10⁹ m^-3
• B. 4.5 X 10²² m^-3
• C. 5 X 10⁹ m^-3
• D. 5 X 10²² m^-3