Pure Si at 300 K has equal electron (ni) and hole concentration (p) o – McqOptions

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1.	Pure Si at 300 K has equal electron (ni) and hole concentration (p) of 1.5 X 1016 m-3. Doping by indium increases p to 4.5 X 1022 m-3. What is n in the doped silicon?
A.	4.5 X 109 m-3
B.	4.5 X 1022 m-3
C.	5 X 109 m-3
D.	5 X 1022 m-3
Answer» D. 5 X 1022 m-3

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