Match List I with List IIList I(Diffusion profile measurement technique)List II(Characteristics)A. Capacitance - voltage1. Not suitable for diffusion studies in VLSI process when shallow junction profile are of interestB. Differential – conductance2. Needs Van dc graff generatorC. Spreading resistance3. Two – point probe arrangementD. RBS4. Concentration near the junction space – charge region at zero bias cannot be measuredChoose the correct answer from the options given below:

Match List I with List IIList I(Diffusion profile measurement techniqu

1.	Match List I with List IIList I(Diffusion profile measurement technique)List II(Characteristics)A. Capacitance - voltage1. Not suitable for diffusion studies in VLSI process when shallow junction profile are of interestB. Differential – conductance2. Needs Van dc graff generatorC. Spreading resistance3. Two – point probe arrangementD. RBS4. Concentration near the junction space – charge region at zero bias cannot be measuredChoose the correct answer from the options given below:
A.	A - 1, B - 2, C - 4, D - 3
B.	A - 4, B - 1, C - 3, D - 2
C.	A - 3, B - 4, C - 2, D - 1
D.	A - 2, B - 3, C - 1, D - 4
Answer» C. A - 3, B - 4, C - 2, D - 1