1.

In VLSI n-MOS process, the thinox mask

A. patterns the ion implantation within the thinox region
B. deposits polysilicon all over the thinox region
C. patterns thickox regions to expose silicon where source, drain or gate areas are required
D. grows thickox over thinox regions in gate areas
Answer» D. grows thickox over thinox regions in gate areas


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