In a Silicon oxidation model, if hG is the gas phase mass transfer co-efficient, CG is the oxidant concentration in the bulk of the gas and CS is the oxidant concentration adjacent to the oxide surface, then for steady-state, the gas phase flux can be expressed as:a) $\frac{\left( {{C}_{S}}-{{C}_{G}} \right)}{{{h}_{G}}}$b) $\frac{\left( {{C}_{G}}-{{C}_{S}} \right)}{{{h}_{G}}}$c) hG (CG - CS)d) hG (CS - CG)of these statements.

Question

In a Silicon oxidation model, if hG is the gas phase mass transfer co-efficient, CG is the oxidant concentration in the bulk of the gas and CS is the oxidant concentration adjacent to the oxide surface, then for steady-state, the gas phase flux can be expressed as:a) $\frac{\left( {{C}_{S}}-{{C}_{G}} \right)}{{{h}_{G}}}$b) $\frac{\left( {{C}_{G}}-{{C}_{S}} \right)}{{{h}_{G}}}$c) hG (CG - CS)d) hG (CS - CG)of these statements.

TuteeHUB · Accepted Answer

(a), (b) and (c) are correct but (d) is wrong

TuteeHUB · Answer

(a) and (c) are correct

TuteeHUB · Answer

(b) is correct but (d) is wrong

TuteeHUB · Answer

(c) is correct but (a) is wrong

1.	In a Silicon oxidation model, if hG is the gas phase mass transfer co-efficient, CG is the oxidant concentration in the bulk of the gas and CS is the oxidant concentration adjacent to the oxide surface, then for steady-state, the gas phase flux can be expressed as:a) \(\frac{\left( {{C}_{S}}-{{C}_{G}} \right)}{{{h}_{G}}}\)b) \(\frac{\left( {{C}_{G}}-{{C}_{S}} \right)}{{{h}_{G}}}\)c) hG (CG - CS)d) hG (CS - CG)of these statements.
A.	(a) and (c) are correct
B.	(b) is correct but (d) is wrong
C.	(c) is correct but (a) is wrong
D.	(a), (b) and (c) are correct but (d) is wrong
Answer» D. (a), (b) and (c) are correct but (d) is wrong

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