1.

If the forward bias is applied to the diode, holes are injected from p side to n side, the concentration Pn of holes in the n side above its thermal equilibrium value Pn(0) is given by

A. Pn0 – Pn(0) exp (-x / Lp)
B. Pn0 + Pn(0) exp (+x / Lp)
C. Pn0 + Pn(0) exp (-x / Lp)
D. Pn0 – Pn(0) exp (+x / Lp)
Answer» D. Pn0 – Pn(0) exp (+x / Lp)


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