For intrinsic gallium arsenide, conductivity at room temperature is 10 – McqOptions

MCQOPTIONS

1.	For intrinsic gallium arsenide, conductivity at room temperature is 10-6 (Ω-m)-1, the electron and hole motilities are, respectively 0.85 and 0.04 m2/V-s. The intrinsic carrier concentration n at room temperature is
A.	7.0 × 1012 m-3
B.	0.7 × 1012 m-3
C.	7.0 × 10-12 m-3
D.	0.7 × 10-12 m-3
Answer» B. 0.7 × 1012 m-3

Discussion

No Comment Found

Related MCQs

Built-in potential V0 of a junction depends on:
An example of trivalent impurity is:
If f(E) is Fermi dirac distribution function, then 1 – f(E) is the probability:(Where Ef is Fermi level)
A silicon sample A is doped with 1018 atom/cm3 of Boron and another silicon sample B of identical dimensions is doped with 1018 atom/cm3 of Phosphorous. If the ratio of electron to hole mobility is 3, then the ratio of conductivity of sample A to that B is:
Mobilities of free electrons and holes in pure Ge are 0.38 and 0.18 m2/V s, respectively. Assume ni for Ge = 2.5 × 1019 m-3. Calculate the intrinsic resistivity of Ge. Take q = 1.6 × 10-19 Coulomb
Match the following list:List - IList – II(a) Resist on UV exposure undergoes cross-linking(i) +ve resist(b) Resist on UV exposure undergoes a decomposition reaction(ii) −ve photoresist(c) Space charge width at zero bias for M−S contact(iii) n.p = ni2(d) Law of mass action(iv) \({\left[ {\frac{{2{\epsilon_s}{V_{bi}}}}{{q{N_D}}}} \right]^{\frac{1}{2}}}\) Correct code are:
A p-type silicon sample has an intrinsic carrier concentration of 1.5 × 1010 /cm3 and a hole concentration of 2.25 × 1015 /cm3. Then the electron concentration is
In semiconductors, a donor may be
In an intrinsic semiconductor, the intrinsic carrier density is:
In an open circuited p-n junction, the contact difference of potential is