For Gunn diodes, gallium arsenide is preferred to silicon because the

1.	For Gunn diodes, gallium arsenide is preferred to silicon because the former:
A.	Has a suitable empty energy band, which silicon does not have
B.	Has a higher ion mobility
C.	Has a lower noise at the highest frequencies
D.	Is capable of handling higher power densities
Answer» B. Has a higher ion mobility

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For Gunn diodes, gallium arsenide is preferred to silicon because the former:

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