For an abrupt PN junction diode, small signal capacitance is 1nF/cm2 a – McqOptions

MCQOPTIONS

1.	For an abrupt PN junction diode, small signal capacitance is 1nF/cm2 at zero bias condition.If the built in voltage, Vbi is 1V, the capacitance at reverse bias of 99V is?
A.	0.1nF/cm2
B.	1nF/cm2
C.	1.5nF/cm2
D.	2nF/cm2
Answer» B.

Discussion

No Comment Found

Related MCQs

The CT for an abrupt PN junction diode is ________
The transition capacitance, CT of a PN junction having uniform doping in both sides, varies with junction voltage as ________
A silicon PN junction diode under revers bias has depletion width of 10µm, relative permittivity is 11.7 and permittivity, ε0 =8.85×10-12F/m. Then depletion capacitance /m2 =?
Consider an abrupt PN junction. Let V0 be the built in potential of this junction and VR be the reverse bias voltage applied. If the junction capacitance Cj is 1pF for V0+VR =1V, then for V0+VR =4V what will be the value of Cj?
The built in capacitance V0 for a step graded PN junction is 0.75V. Junction capacitance Cj at reverse bias when VR=1.25V is 5pF. The value of Cj when VR=7.25V is?
For an abrupt PN junction diode, small signal capacitance is 1nF/cm2 at zero bias condition.If the built in voltage, Vbi is 1V, the capacitance at reverse bias of 99V is?
Compared to a PN junction with NA=1014/CM3, which one of the following is true for NA=ND= 1020/CM3?