Assume that the values of mobility of holes and that of electrons in a – McqOptions

MCQOPTIONS

1.	Assume that the values of mobility of holes and that of electrons in an intrinsic semiconductor are equal and the values of conductivity and initrinsic electron density are 2.32 /Ω m and 2.5 × 1019 /m3 respectively. Then, the mobility of electron/hole is approximately:
A.	0.3 m2/Vs
B.	0.5 m2/Vs
C.	0.7 m2/Vs
D.	0.9 m2/Vs
Answer» B. 0.5 m2/Vs

Discussion

No Comment Found

Related MCQs

Built-in potential V0 of a junction depends on:
An example of trivalent impurity is:
If f(E) is Fermi dirac distribution function, then 1 – f(E) is the probability:(Where Ef is Fermi level)
A silicon sample A is doped with 1018 atom/cm3 of Boron and another silicon sample B of identical dimensions is doped with 1018 atom/cm3 of Phosphorous. If the ratio of electron to hole mobility is 3, then the ratio of conductivity of sample A to that B is:
Mobilities of free electrons and holes in pure Ge are 0.38 and 0.18 m2/V s, respectively. Assume ni for Ge = 2.5 × 1019 m-3. Calculate the intrinsic resistivity of Ge. Take q = 1.6 × 10-19 Coulomb
Match the following list:List - IList – II(a) Resist on UV exposure undergoes cross-linking(i) +ve resist(b) Resist on UV exposure undergoes a decomposition reaction(ii) −ve photoresist(c) Space charge width at zero bias for M−S contact(iii) n.p = ni2(d) Law of mass action(iv) \({\left[ {\frac{{2{\epsilon_s}{V_{bi}}}}{{q{N_D}}}} \right]^{\frac{1}{2}}}\) Correct code are:
A p-type silicon sample has an intrinsic carrier concentration of 1.5 × 1010 /cm3 and a hole concentration of 2.25 × 1015 /cm3. Then the electron concentration is
In semiconductors, a donor may be
In an intrinsic semiconductor, the intrinsic carrier density is:
In an open circuited p-n junction, the contact difference of potential is