Assertion (A): An electron having charge - e and mass m and lying in an electric field E is subjected to an acceleration - (e/m) E. Reason (R): If there are n electrons/m3 moving with velocity vx and each electron has a charge - e, the current density J = - n evx

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not correct explanation of A

Assertion (A): An electron having charge - e and mass m and lying in a

1.	Assertion (A): An electron having charge - e and mass m and lying in an electric field E is subjected to an acceleration - (e/m) E. Reason (R): If there are n electrons/m3 moving with velocity vx and each electron has a charge - e, the current density J = - n evx
A.	Both A and R are true and R is correct explanation of A
B.	Both A and R are true but R is not correct explanation of A
C.	A is true but R is false
D.	A is false but R is true
Answer» C. A is true but R is false

Discussion

No Comment Found

Related MCQs

Silicon and germanium have diamond structure. The number of atoms in a volume equal to a3 where a is the edge of elementary cube are
Assertion (A): The angular momentum of an atom is due to three contributions viz. orbital, electron spin and nuclear spin. Reason (R): The nuclear spin magnetic moment is much more than electron spin magnetic moment.
Assertion (A): Resistivity of a perfect single crystal of a metal goes to zero as T approaches zero. Reason (R): Scattering of electrons is due to deviations from perfect periodicity of lattice.
Assertion (A): Holes are majority carriers in p type semiconductor. Reason (R): In p type semiconductor, the electrons produced by thermal agitation recombine with holes.
When an electron moves at velocity v in combined electric and magnetic fields E and H, the Lorentz force F is F = - e(E + v x B).
Assertion (A): Relative permittivity is determined by the atomic structure of the material. Reason (R): Absolute permittivity is determined by the atomic structure of the material.
Assertion (A): Rochelle salt and Barium titanate are both ferroelectric. Reason (R): Ferroelectric materials exhibit hysteresis effect.
Assertion (A): Intrinsic resistivity of silicon is lower than that of germanium. Reason (R): Magnitude of free electron concentration in germanium is more than that of silicon.
The orientation polarization is 1.directly proportional to temperature 2.inversely proportional to temperature 3.inversely proportional to square of permanent dipole moment 4.directly proportional to square of permanent dipole moment. Which of the above are correct?
Assertion (A): An electron having charge - e and mass m and lying in an electric field E is subjected to an acceleration - (e/m) E. Reason (R): If there are n electrons/m3 moving with velocity vx and each electron has a charge - e, the current density J = - n evx

Assertion (A): An electron having charge - e and mass m and lying in an electric field E is subjected to an acceleration - (e/m) E. Reason (R): If there are n electrons/m3 moving with velocity vx and each electron has a charge - e, the current density J = - n evx

Discussion

No Comment Found

Related MCQs

Reply to Comment