A modern power semiconductor device that combines the characteristic – McqOptions

MCQOPTIONS

1.	A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
A.	IGBT
B.	FCT
C.	MCT
D.	GTO
Answer» B. FCT

Discussion

No Comment Found

Related MCQs

<p> For commutation in three phase PAC, normally balanced three phase voltages VR, VY and VB are connected to the three legs of the converter via______________?</p>
<p> The typical time of rising time lies between______________?</p>
<p> Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then________________?</p>
<p> When a large surge current of very short duration flows through a thyristor then which one of the following device will operate to protect the thyristor ___________?</p>
<p> Which of following is normally ON device?</p>
<p> Maximum di / dt in a SCR is________?</p>
<p> During gate recovery time_____________?</p>
<p> To meet high current demand we use SCRs in______________?</p>
<p> In reverse blocking mode of a thyristor______?</p>
<p> If a shunt motor is started with its field winding open then___________?</p>