MCQOPTIONS
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MCQOPTIONS
This section includes 9 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
What happens to a tunnel diode when the reverse bias effect goes beyond the valley point? |
| A. | it behaves as a normal diode |
| B. | it attains increased negative slope effects |
| C. | reverse saturation current increases |
| D. | beacomes independent of temperature |
| Answer» B. it attains increased negative slope effects | |
| 2. |
In the construction of tunnnel diode,why is the pellet soldered to anode contact and a tindot to cathode contact via a mesh screen? |
| A. | for better conduction and reduce inductance respectively |
| B. | for heat dissipation and increase conduction respectively |
| C. | for heat dissipation and reduce induction respectively |
| D. | for better conduction and reduce inductance respectively |
| Answer» D. for better conduction and reduce inductance respectively | |
| 3. |
For a tunnel diode, when p is probability that carrier crosses the barrier, e is energy, w is width. |
| A. | p e<sup>(-A*e*w)</sup> |
| B. | p 1/ e<sup>(-A*e*w)</sup> |
| C. | p e<sup>(A*e*w)</sup> |
| D. | p 1/e<sup>(A*e*w)</sup> |
| Answer» B. p 1/ e<sup>(-A*e*w)</sup> | |
| 4. |
Tunnel diodes are made up of________ |
| A. | Germanium and silicon materials |
| B. | AlGaAs |
| C. | AlGaInP |
| D. | ZnTe |
| Answer» B. AlGaAs | |
| 5. |
The tunnneling involves_______ |
| A. | acceleration of electrons in p side |
| B. | movement of electrons from n side conduction band to p side valance band |
| C. | charge distribution managementin both the bands |
| D. | positive slope characteristics of diode |
| Answer» C. charge distribution managementin both the bands | |
| 6. |
With interments of reverse bias, the tunnel current also increases because________ |
| A. | electrons move from balance band of pside to conduction band of nside |
| B. | fermi level of pside becomes higher than that of nside |
| C. | junction currrent decreases |
| D. | unequality of n and p bandedge |
| Answer» B. fermi level of pside becomes higher than that of nside | |
| 7. |
The depletion layer of tunnel diode is very small beacause______ |
| A. | its abrupt and has high dopants |
| B. | uses positive conductance property |
| C. | its used for high frequency ranges |
| D. | tunneling effect |
| Answer» B. uses positive conductance property | |
| 8. |
Tunnel diode has a very fast operation in__________ |
| A. | gamma frequency region |
| B. | ultraviolet frequency region |
| C. | microwave frequency region |
| D. | radio frequency region |
| Answer» D. radio frequency region | |
| 9. |
If X corresponds to a tunnel diode and Y to an avalanche diode, then__________ |
| A. | X operates in reverse bias and Y operates in forward bias |
| B. | X operates in reverse bias and Y operates in reverse bias |
| C. | X operates in forward bias and Y operates in forward bias |
| D. | X operates in forward bias and Y operates in reverse bias |
| Answer» E. | |