

MCQOPTIONS
Saved Bookmarks
This section includes 236 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering knowledge and support exam preparation. Choose a topic below to get started.
101. |
In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of ß is ___________%! |
A. | 100 |
B. | 50 |
C. | about 1 |
D. | 200 |
Answer» E. | |
102. |
The base of a transistor is ___________ doped%! |
A. | heavily |
B. | moderately |
C. | lightly |
D. | none of the above |
Answer» D. none of the above | |
103. |
The voltage gain of a transistor connected in common collector arrangement is ___________%! |
A. | equal to 1 |
B. | more than 10 |
C. | more than 100 |
D. | less than 1 |
Answer» E. | |
104. |
The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by ___________%! |
A. | 100 µA |
B. | 25 µA |
C. | 20 µA |
D. | 50 µA |
Answer» E. | |
105. |
The stability factor of a collector feedback bias circuit is ___________ that of base resistor bias.%! |
A. | The same as |
B. | More than |
C. | Less than |
D. | None of the above |
Answer» D. None of the above | |
106. |
The number of depletion layers in a transistor is ___________%! |
A. | four |
B. | three |
C. | one |
D. | two |
Answer» E. | |
107. |
*$_In a particular biasing circuit, the value of RE is about? |
A. | 10 kΩ |
B. | 1 MO |
C. | 100 kΩ |
D. | 800 O |
Answer» E. | |
108. |
*$_The purpose of resistance in the emitter circuit of a transistor amplifier is to ___________? |
A. | Limit the maximum emitter current |
B. | Provide base-emitter bias |
C. | Limit the change in emitter current |
D. | None of the above |
Answer» D. None of the above | |
109. |
*$_At series resonance, the net reactive component of circuit current is ___________? |
A. | Zero |
B. | Inductive |
C. | Capacitive |
D. | None of the above |
Answer» B. Inductive | |
110. |
*$_The point of intersection of d.c. and a.c. load lines represents ___________? |
A. | Operating point |
B. | Current gain |
C. | Voltage gain |
D. | None of the above |
Answer» B. Current gain | |
111. |
*$_The collector-base junction in a transistor has ___________? |
A. | forward bias at all times |
B. | reverse bias at all times |
C. | low resistance |
D. | none of the above |
Answer» C. low resistance | |
112. |
*$_For frequencies above the resonant frequency , a series LC circuit behaves as a ___________ load? |
A. | Resistive |
B. | Inductive |
C. | Capacitive |
D. | None of the above |
Answer» C. Capacitive | |
113. |
*$_The most commonly used semiconductor in the manufacture of a transistor is ___________? |
A. | germanium |
B. | silicon |
C. | carbon |
D. | none of the above |
Answer» C. carbon | |
114. |
*$_The current IB is ___________? |
A. | electron current |
B. | hole current |
C. | donor ion current |
D. | acceptor ion current |
Answer» B. hole current | |
115. |
*$_The operating point is also called the ___________? |
A. | Cut off point |
B. | Quiescent point |
C. | Saturation point |
D. | None of the above |
Answer» C. Saturation point | |
116. |
*$_In series resonance, there is ___________? |
A. | Voltage amplification |
B. | Current amplification |
C. | Both voltage and current amplification |
D. | None of the above |
Answer» B. Current amplification | |
117. |
*/*_The stability factor of a collector feedback bias circuit is ___________ that of base resistor bias.? |
A. | The same as |
B. | More than |
C. | Less than |
D. | None of the above |
Answer» D. None of the above | |
118. |
*/*_The number of depletion layers in a transistor is ___________? |
A. | four |
B. | three |
C. | one |
D. | two |
Answer» E. | |
119. |
*/*_The voltage gain of a transistor connected in common collector arrangement is ___________? |
A. | equal to 1 |
B. | more than 10 |
C. | more than 100 |
D. | less than 1 |
Answer» E. | |
120. |
*/*_The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by ___________? |
A. | 100 µA |
B. | 25 µA |
C. | 20 µA |
D. | 50 µA |
Answer» E. | |
121. |
*/*_The base of a transistor is ___________ doped? |
A. | heavily |
B. | moderately |
C. | lightly |
D. | none of the above |
Answer» D. none of the above | |
122. |
*/*_The arrow in the symbol of a transistor indicates the direction of ___________? |
A. | electron current in the emitter |
B. | electron current in the collector |
C. | hole current in the emitter |
D. | donor ion current |
Answer» D. donor ion current | |
123. |
*/*_The relation between ß and a is ___________? |
A. | ß = 1 / (1 – a ) |
B. | ß = (1 – a ) / a |
C. | ß = a / (1 – a ) |
D. | ß = a / (1 + a ) |
Answer» D. ‚àö√º = a / (1 + a ) | |
124. |
*/*_A resonant circuit contains ___________ elements? |
A. | R and L only |
B. | R and C only |
C. | Only R |
D. | L and C |
Answer» E. | |
125. |
*/*_The most commonly used transistor arrangement is ___________ arrangement? |
A. | common emitter |
B. | common base |
C. | common collector |
D. | none of the above |
Answer» B. common base | |
126. |
*/*_The value of VBE ___________? |
A. | Depends upon IC to moderate extent |
B. | Is almost independent of IC |
C. | Is strongly dependant on IC |
D. | None of the above |
Answer» C. Is strongly dependant on IC | |
127. |
*/*_In a transistor, the base current is about ___________ of emitter current? |
A. | 25% |
B. | 20% |
C. | 35% |
D. | 5% |
Answer» E. | |
128. |
*/*_In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of ß is ___________? |
A. | 100 |
B. | 50 |
C. | about 1 |
D. | 200 |
Answer» E. | |
129. |
*/*_Transistor biasing is generally provided by a ___________? |
A. | Biasing circuit |
B. | Bias battery |
C. | Diode |
D. | None of the above |
Answer» B. Bias battery | |
130. |
*/*_In the double tuned circuit, if the mutual inductance between the two tuned circuits is decreased, the level of resonance curve ___________? |
A. | Remains the same |
B. | Is lowered |
C. | Is raised |
D. | None of the above |
Answer» D. None of the above | |
131. |
*/*_At series or parallel resonance, the circuit power factor is ___________? |
A. | 0% |
B. | 5% |
C. | 10% |
D. | 8% |
Answer» D. 8% | |
132. |
*/*_If a high degree of selectivity is desired, then double-tuned circuit should have ___________ coupling? |
A. | Loose |
B. | Tight |
C. | Critical |
D. | None of the above |
Answer» B. Tight | |
133. |
*/*_A tuned amplifier is used in ___________ applications? |
A. | Radio frequency |
B. | Low frequency |
C. | Audio frequency |
D. | None of the above |
Answer» B. Low frequency | |
134. |
*/*_IC = [a / (1 - a )] IB + [ / (1 - a )]? |
A. | ICBO |
B. | ICEO |
C. | IC |
D. | IE |
Answer» B. ICEO | |
135. |
*/*_Double tuned circuits are used in ___________ stages of a radio receiver? |
A. | IF |
B. | Audio |
C. | Output |
D. | None of the above |
Answer» B. Audio | |
136. |
*/*_In a pnp transistor, the current carriers are ___________? |
A. | acceptor ions |
B. | donor ions |
C. | free electrons |
D. | holes |
Answer» E. | |
137. |
*/*_The phase difference between the input and output voltages in a common base arrangement is ___________? |
A. | 180° |
B. | 90° |
C. | 270° |
D. | 0° |
Answer» E. | |
138. |
*/*_Tuned class C amplifiers are used for RF signals of ___________? |
A. | Low power |
B. | High power |
C. | Very high power |
D. | None of the above |
Answer» E. | |
139. |
*/*_In a transistor amplifier circuit VCE = VCB + ___________? |
A. | VBE |
B. | 2 VBE |
C. | 5 VBE |
D. | None of the above |
Answer» B. 2 VBE | |
140. |
*/*_In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ?? |
A. | 2000 Ω |
B. | 1400 Ω |
C. | 800 Ω |
D. | 1600 Ω |
Answer» D. 1600 ‚Äö√ë¬∂ | |
141. |
%_Thermal runaway occurs when ____________% |
A. | Collector is reverse biased |
B. | Transistor is not biased |
C. | Emitter is forward biased |
D. | Junction capacitance is high |
Answer» C. Emitter is forward biased | |
142. |
%_If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to ____________% |
A. | 6 mA |
B. | 2 mA |
C. | 3 mA |
D. | 1 mA |
Answer» D. 1 mA | |
143. |
%_At parallel resonance, the net reactive component circuit current is ____________% |
A. | Capacitive |
B. | Zero |
C. | Inductive |
D. | None of the above |
Answer» C. Inductive | |
144. |
%_Operating point represents ____________% |
A. | Values of IC and VCE when signal is applied |
B. | The magnitude of signal |
C. | Zero signal values of IC and VCE |
D. | None of the above |
Answer» D. None of the above | |
145. |
%_A transistor has ____________% |
A. | one pn junction |
B. | two pn junctions |
C. | three pn junctions |
D. | four pn junctions |
Answer» C. three pn junctions | |
146. |
%_For frequencies below resonant frequency, a series LC circuit behaves as a ___________ load_% |
A. | Resistive |
B. | Capacitive |
C. | Inductive |
D. | None of the above |
Answer» C. Inductive | |
147. |
%_The output impedance of a transistor is ____________% |
A. | high |
B. | zero |
C. | low |
D. | very low |
Answer» B. zero | |
148. |
%_At the base emitter junctions of a transistor, one finds ____________% |
A. | a reverse bias |
B. | a wide depletion layer |
C. | low resistance |
D. | none of the above |
Answer» D. none of the above | |
149. |
%_For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than_% |
A. | 10 IB |
B. | 3 IB |
C. | 2 IB |
D. | 4 IB |
Answer» B. 3 IB | |
150. |
%_In voltage divider bias, VCC = 25 V; R1 = 10 kΩ; R2 = 2.2 V ; RC = 3.6 V and RE =1 kΩ. What is the emitter voltage?_% |
A. | 7 V |
B. | 3 V |
C. | 5 V |
D. | 8 V |
Answer» E. | |