Explore topic-wise MCQs in Electrical Engineering.

This section includes 236 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering knowledge and support exam preparation. Choose a topic below to get started.

101.

In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of ß is ___________%!

A. 100
B. 50
C. about 1
D. 200
Answer» E.
102.

The base of a transistor is ___________ doped%!

A. heavily
B. moderately
C. lightly
D. none of the above
Answer» D. none of the above
103.

The voltage gain of a transistor connected in common collector arrangement is ___________%!

A. equal to 1
B. more than 10
C. more than 100
D. less than 1
Answer» E.
104.

The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by ___________%!

A. 100 µA
B. 25 µA
C. 20 µA
D. 50 µA
Answer» E.
105.

The stability factor of a collector feedback bias circuit is ___________ that of base resistor bias.%!

A. The same as
B. More than
C. Less than
D. None of the above
Answer» D. None of the above
106.

The number of depletion layers in a transistor is ___________%!

A. four
B. three
C. one
D. two
Answer» E.
107.

*$_In a particular biasing circuit, the value of RE is about?

A. 10 kΩ
B. 1 MO
C. 100 kΩ
D. 800 O
Answer» E.
108.

*$_The purpose of resistance in the emitter circuit of a transistor amplifier is to ___________?

A. Limit the maximum emitter current
B. Provide base-emitter bias
C. Limit the change in emitter current
D. None of the above
Answer» D. None of the above
109.

*$_At series resonance, the net reactive component of circuit current is ___________?

A. Zero
B. Inductive
C. Capacitive
D. None of the above
Answer» B. Inductive
110.

*$_The point of intersection of d.c. and a.c. load lines represents ___________?

A. Operating point
B. Current gain
C. Voltage gain
D. None of the above
Answer» B. Current gain
111.

*$_The collector-base junction in a transistor has ___________?

A. forward bias at all times
B. reverse bias at all times
C. low resistance
D. none of the above
Answer» C. low resistance
112.

*$_For frequencies above the resonant frequency , a series LC circuit behaves as a ___________ load?

A. Resistive
B. Inductive
C. Capacitive
D. None of the above
Answer» C. Capacitive
113.

*$_The most commonly used semiconductor in the manufacture of a transistor is ___________?

A. germanium
B. silicon
C. carbon
D. none of the above
Answer» C. carbon
114.

*$_The current IB is ___________?

A. electron current
B. hole current
C. donor ion current
D. acceptor ion current
Answer» B. hole current
115.

*$_The operating point is also called the ___________?

A. Cut off point
B. Quiescent point
C. Saturation point
D. None of the above
Answer» C. Saturation point
116.

*$_In series resonance, there is ___________?

A. Voltage amplification
B. Current amplification
C. Both voltage and current amplification
D. None of the above
Answer» B. Current amplification
117.

*/*_The stability factor of a collector feedback bias circuit is ___________ that of base resistor bias.?

A. The same as
B. More than
C. Less than
D. None of the above
Answer» D. None of the above
118.

*/*_The number of depletion layers in a transistor is ___________?

A. four
B. three
C. one
D. two
Answer» E.
119.

*/*_The voltage gain of a transistor connected in common collector arrangement is ___________?

A. equal to 1
B. more than 10
C. more than 100
D. less than 1
Answer» E.
120.

*/*_The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by ___________?

A. 100 µA
B. 25 µA
C. 20 µA
D. 50 µA
Answer» E.
121.

*/*_The base of a transistor is ___________ doped?

A. heavily
B. moderately
C. lightly
D. none of the above
Answer» D. none of the above
122.

*/*_The arrow in the symbol of a transistor indicates the direction of ___________?

A. electron current in the emitter
B. electron current in the collector
C. hole current in the emitter
D. donor ion current
Answer» D. donor ion current
123.

*/*_The relation between ß and a is ___________?

A. ß = 1 / (1 – a )
B. ß = (1 – a ) / a
C. ß = a / (1 – a )
D. ß = a / (1 + a )
Answer» D. ‚àö√º = a / (1 + a )
124.

*/*_A resonant circuit contains ___________ elements?

A. R and L only
B. R and C only
C. Only R
D. L and C
Answer» E.
125.

*/*_The most commonly used transistor arrangement is ___________ arrangement?

A. common emitter
B. common base
C. common collector
D. none of the above
Answer» B. common base
126.

*/*_The value of VBE ___________?

A. Depends upon IC to moderate extent
B. Is almost independent of IC
C. Is strongly dependant on IC
D. None of the above
Answer» C. Is strongly dependant on IC
127.

*/*_In a transistor, the base current is about ___________ of emitter current?

A. 25%
B. 20%
C. 35%
D. 5%
Answer» E.
128.

*/*_In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of ß is ___________?

A. 100
B. 50
C. about 1
D. 200
Answer» E.
129.

*/*_Transistor biasing is generally provided by a ___________?

A. Biasing circuit
B. Bias battery
C. Diode
D. None of the above
Answer» B. Bias battery
130.

*/*_In the double tuned circuit, if the mutual inductance between the two tuned circuits is decreased, the level of resonance curve ___________?

A. Remains the same
B. Is lowered
C. Is raised
D. None of the above
Answer» D. None of the above
131.

*/*_At series or parallel resonance, the circuit power factor is ___________?

A. 0%
B. 5%
C. 10%
D. 8%
Answer» D. 8%
132.

*/*_If a high degree of selectivity is desired, then double-tuned circuit should have ___________ coupling?

A. Loose
B. Tight
C. Critical
D. None of the above
Answer» B. Tight
133.

*/*_A tuned amplifier is used in ___________ applications?

A. Radio frequency
B. Low frequency
C. Audio frequency
D. None of the above
Answer» B. Low frequency
134.

*/*_IC = [a / (1 - a )] IB + [ / (1 - a )]?

A. ICBO
B. ICEO
C. IC
D. IE
Answer» B. ICEO
135.

*/*_Double tuned circuits are used in ___________ stages of a radio receiver?

A. IF
B. Audio
C. Output
D. None of the above
Answer» B. Audio
136.

*/*_In a pnp transistor, the current carriers are ___________?

A. acceptor ions
B. donor ions
C. free electrons
D. holes
Answer» E.
137.

*/*_The phase difference between the input and output voltages in a common base arrangement is ___________?

A. 180°
B. 90°
C. 270°
D. 0°
Answer» E.
138.

*/*_Tuned class C amplifiers are used for RF signals of ___________?

A. Low power
B. High power
C. Very high power
D. None of the above
Answer» E.
139.

*/*_In a transistor amplifier circuit VCE = VCB + ___________?

A. VBE
B. 2 VBE
C. 5 VBE
D. None of the above
Answer» B. 2 VBE
140.

*/*_In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ??

A. 2000 Ω
B. 1400 Ω
C. 800 Ω
D. 1600 Ω
Answer» D. 1600 ‚Äö√ë¬∂
141.

%_Thermal runaway occurs when ____________%

A. Collector is reverse biased
B. Transistor is not biased
C. Emitter is forward biased
D. Junction capacitance is high
Answer» C. Emitter is forward biased
142.

%_If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to ____________%

A. 6 mA
B. 2 mA
C. 3 mA
D. 1 mA
Answer» D. 1 mA
143.

%_At parallel resonance, the net reactive component circuit current is ____________%

A. Capacitive
B. Zero
C. Inductive
D. None of the above
Answer» C. Inductive
144.

%_Operating point represents ____________%

A. Values of IC and VCE when signal is applied
B. The magnitude of signal
C. Zero signal values of IC and VCE
D. None of the above
Answer» D. None of the above
145.

%_A transistor has ____________%

A. one pn junction
B. two pn junctions
C. three pn junctions
D. four pn junctions
Answer» C. three pn junctions
146.

%_For frequencies below resonant frequency, a series LC circuit behaves as a ___________ load_%

A. Resistive
B. Capacitive
C. Inductive
D. None of the above
Answer» C. Inductive
147.

%_The output impedance of a transistor is ____________%

A. high
B. zero
C. low
D. very low
Answer» B. zero
148.

%_At the base emitter junctions of a transistor, one finds ____________%

A. a reverse bias
B. a wide depletion layer
C. low resistance
D. none of the above
Answer» D. none of the above
149.

%_For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than_%

A. 10 IB
B. 3 IB
C. 2 IB
D. 4 IB
Answer» B. 3 IB
150.

%_In voltage divider bias, VCC = 25 V; R1 = 10 kΩ; R2 = 2.2 V ; RC = 3.6 V and RE =1 kΩ. What is the emitter voltage?_%

A. 7 V
B. 3 V
C. 5 V
D. 8 V
Answer» E.