MCQOPTIONS
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MCQOPTIONS
This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
IN_THE_REVERSE_BLOCKING_MODE_THE_MIDDLE_JUNCTION_(J2)_HAS_THE_CHARACTERISTICS_OF_THAT_OF_A?$ |
| A. | transistor |
| B. | capacitor |
| C. | inductor |
| D. | none of the mentioned |
| Answer» C. inductor | |
| 2. |
_________are_semiconductor_thyristor_devices_which_can_be_turned-on_by_light_of_appropriate_wavelengths.$ |
| A. | LGTOs |
| B. | LASERs |
| C. | MASERs |
| D. | LASCRs |
| Answer» E. | |
| 3. |
The value of anode current required to maintain the conduction of an SCR even though the gate signal is removed is called as th? |
| A. | holding current |
| B. | latching current |
| C. | switching current |
| D. | peak anode current |
| Answer» C. switching current | |
| 4. |
For the SCR to remain in the ON (conducting) state |
| A. | gate signal is continuously required |
| B. | no continuous gate signal is required |
| C. | no forward anode-cathode voltage is required |
| D. | negative gate signal is continuously required |
| Answer» C. no forward anode-cathode voltage is required | |
| 5. |
The forward break over voltage is maximum when |
| A. | Gate current = ‚àû |
| B. | Gate current = 0 |
| C. | Gate current = -‚àû |
| D. | It is independent of gate current |
| Answer» C. Gate current = -‚Äö√Ñ√∂‚àö‚Ć‚àö¬™ | |
| 6. |
Among the following, the most suitable method to turn on the SCR device is the |
| A. | gate triggering method |
| B. | dv/dt triggering method |
| C. | forward voltage triggering method |
| D. | temperature triggering method |
| Answer» B. dv/dt triggering method | |
| 7. |
Usually the forward voltage triggering method is not used to turn-on the SCR because |
| A. | it increases losses |
| B. | it causes noise production |
| C. | it may damage the junction & destroy the device |
| D. | relatively it’s an inefficient method |
| Answer» D. relatively it‚Äö√Ñ√∂‚àö√ë‚àö¬•s an inefficient method | |
| 8. |
A thyristor can be bought from the forward conduction mode to forward blocking mode by |
| A. | the dv/dt triggering method |
| B. | applying a negative gate signal |
| C. | applying a positive gate signal |
| D. | applying a reverse voltage across anode-cathode terminals |
| Answer» E. | |
| 9. |
For a forward conducting SCR device, as the forward anode to cathode voltage is increased |
| A. | the device turns on at higher values of gate current |
| B. | the device turns on at lower values of gate current |
| C. | the forward impedance of the device goes on increasing |
| D. | the forward impedance of the device goes on decreasing |
| Answer» C. the forward impedance of the device goes on increasing | |
| 10. |
The forward break over voltage is the |
| A. | anode-cathode voltage at which conduction starts with gate signal applied |
| B. | anode-cathode voltage at which conduction starts with no gate signal applied |
| C. | gate voltage at which conduction starts with no anode-cathode voltage |
| D. | gate voltage at which conduction starts with anode-cathode voltage applied |
| Answer» C. gate voltage at which conduction starts with no anode-cathode voltage | |