Explore topic-wise MCQs in Optical Communications.

This section includes 11 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communications knowledge and support exam preparation. Choose a topic below to get started.

1.

The external power efficiency of an injection laser with a GaAs is 13% having band gap energy of 1.64 eV. Determine external power efficiency.

A. 0.198
B. 0.283
C. 0.366
D. 0.467
Answer» B. 0.283
2.

A correct DH structure will restrict the vertical width of waveguide region is?

A. 0.5 m.
B. 0.69 m
C. 0.65 m
D. Less than 0.4 m
Answer» E.
3.

Single longitudinal mode operation is obtained by __________

A. Eliminating all transverse mode
B. Eliminating all longitudinal modes
C. Increasing the length of cavity
D. Reducing the length of cavity
Answer» E.
4.

The spectral width of emission from the single mode device is __________

A. Smaller than broadened transition line-width
B. Larger than broadened transition line-width
C. Equal the broadened transition line-width
D. Cannot be determined
Answer» B. Larger than broadened transition line-width
5.

Laser modes are generally separated by few __________

A. Tenths of micrometer
B. Tenths of nanometer
C. Tenths of Pico-meter
D. Tenths of millimeter
Answer» C. Tenths of Pico-meter
6.

Gain guided laser structure are __________

A. Chemical laser
B. Gas laser
C. DH injection laser
D. Quantum well laser
Answer» D. Quantum well laser
7.

A particular laser structure is designed so that the active region extends the edges of devices.

A. True
B. False
Answer» B. False
8.

T is known as slope quantum efficiency.

A. True
B. False
Answer» C.
9.

Injection laser have a high threshold current density of __________

A. 10<sup>4</sup>Acm<sup>-2</sup> and more
B. 10<sup>2</sup>Acm<sup>-2</sup>
C. 10<sup>-2</sup>Acm<sup>-2</sup>
D. 10<sup>-3</sup>Acm<sup>-2</sup>
Answer» B. 10<sup>2</sup>Acm<sup>-2</sup>
10.

In semiconductor injection laser, narrow line bandwidth is of the order?

A. 1 nm or less
B. 4 nm
C. 5 nm
D. 3 nm
Answer» B. 4 nm
11.

Stimulated emission by recombination of injected carriers is encouraged in __________

A. Semiconductor injection laser
B. Gas laser
C. Chemist laser
D. Dye laser
Answer» B. Gas laser