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This section includes 9 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits knowledge and support exam preparation. Choose a topic below to get started.
1. |
What is the maximum value of gain of an amplifier? |
A. | 140dB |
B. | 130dB |
C. | 120db |
D. | 100dB |
Answer» D. 100dB | |
2. |
Which of the following is the equation for stray capacitance frequency? |
A. | F<sub>H</sub> = 1/27R |
B. | F<sub>H</sub> = 1/R |
C. | F<sub>H</sub> = 54/27R |
D. | F<sub>H</sub> = 11/27R |
Answer» B. F<sub>H</sub> = 1/R | |
3. |
At higher frequency, the capacitance of an amplifier circuit is mainly because of which capacitance? |
A. | Coupling capacitors |
B. | Stray capacitance |
C. | Resistors |
D. | Inductors |
Answer» C. Resistors | |
4. |
Which of the following is the necessary condition to design an amplifier? |
A. | V<sub>ce</sub> <sup>1</sup> <sub>10</sub> of RC |
B. | |V<sub>ce</sub>| <sup>1</sup> <sub>10</sub> of RC |
C. | |V<sub>ce</sub>| <sup>1</sup> <sub>1000</sub> of RC |
D. | |V<sub>ce</sub>| <sup>1</sup> <sub>100</sub> of RC |
Answer» C. |V<sub>ce</sub>| <sup>1</sup> <sub>1000</sub> of RC | |
5. |
FET amplifier does not obey the law of conservation of energy. |
A. | True |
B. | False |
Answer» C. | |
6. |
Which of the following is the main advantage of Self bias? |
A. | Eliminates the need of two power supply |
B. | Maximum stability |
C. | Minimum stability |
D. | Maximum & Minimum stability |
Answer» B. Maximum stability | |
7. |
The action of JFET in its equivalent circuit can be represented as which of the following? |
A. | Current controlled current source |
B. | Current controlled voltage source |
C. | Voltage controlled current source |
D. | Voltage controlled Voltage source |
Answer» D. Voltage controlled Voltage source | |
8. |
The pinch off voltage of JFET is 5v. What is its cut off voltage? |
A. | 2.5V |
B. | 3V |
C. | 4V |
D. | 5V |
Answer» E. | |
9. |
Two identical FETs, each characterized by the parameters g_m and r_d are connected in parallel .The composite FET is then characterized by the parameters_____________ |
A. | g<sub>m</sub>/2 and 2r<sub>d</sub> |
B. | g<sub>m</sub>/2 and 2r<sub>d</sub> |
C. | 2g<sub>m</sub> and r<sub>d</sub>/2 |
D. | 2g<sub>m</sub> and r<sub>d</sub>/2 |
Answer» D. 2g<sub>m</sub> and r<sub>d</sub>/2 | |