Explore topic-wise MCQs in Electronic Devices and Circuits.

This section includes 4 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits knowledge and support exam preparation. Choose a topic below to get started.

1.

Which of the below issues may not be experienced when using MOSFETs?

A. Weak avalanche
B. Velocity saturation
C. Punch-through
D. All of the mentioned
Answer» E.
Discussion
2.

In MOSFETs a breakdown may occur at around 30 V. This is due to

A. Velocity saturation
B. Breakdown of the gate diode
C. Sudden decrease in the depletion region
D. Fall of the threshold voltage due to impurities
Answer» C. Sudden decrease in the depletion region
Discussion
3.

At ______________ the drain current is no longer related to the Vgs by square law relationship.

A. When the temperature is high (around 700 Celsius)
B. When temperature is very low (around -50 Celsius)
C. Velocity saturation
D. None of the mentioned
Answer» D. None of the mentioned
Discussion
4.

An NMOS transistor has Vt0 = 0.8 V, 2 f = 0.7 V, and = 0.4 V1/2. Find Vt when VSB = 3 V.

A. 0.12 V
B. 1.23 V
C. 2.34 V
D. 3.45 V
Answer» C. 2.34 V
Discussion