Explore topic-wise MCQs in Electronic Devices and Circuits Questions and Answers.

This section includes 2 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits Questions and Answers knowledge and support exam preparation. Choose a topic below to get started.

1.	A silicon sample doped n type at 10^18 cm3 have a resistance of 10 ohm. The sample has an area of 10^(-6) cm2 and a length of 10 µm . The doping efficiency of the sample is (µn = 800 cm2/V-s )
A.	43.2%
B.	78.1%
C.	96.3%
D.	54.3%
Answer» C. 96.3%

Discussion

2.	In germanium semiconductor at T 300 K, the acceptor concentrations is Na 1013 cm3 and donor concentration is Nd 0. The thermal equilibrium concentration p0 is
A.	2.97 x 109 cm3
B.	2.68 x 1012 cm3
C.	2.95 x 1013 cm3
D.	2.4 cm3
Answer» D. 2.4 cm3

Discussion

Explore topic-wise MCQs in Electronic Devices and Circuits Questions and Answers.

A silicon sample doped n type at 10^18 cm3 have a resistance of 10 ohm. The sample has an area of 10^(-6) cm2 and a length of 10 µm . The doping efficiency of the sample is (µn = 800 cm2/V-s )

In germanium semiconductor at T 300 K, the acceptor concentrations is Na 1013 cm3 and donor concentration is Nd 0. The thermal equilibrium concentration p0 is