Explore topic-wise MCQs in Electronic Devices and Circuits.

This section includes 4 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits knowledge and support exam preparation. Choose a topic below to get started.

1.

A particular intrinsic semiconductor has a resistivity of 50 (ohm-cm) at T = 300 K and 5 (ohm-cm) at T = 330 K. If change in mobility with temperature is neglected, the bandgap energy of the semiconductor is

A. 1.9 eV
B. 1.3 eV
C. 2.6 eV
D. 0.64 eV
Answer» C. 2.6 eV
2.

Six volts is applied across a 2 cm long semiconductor bar. The average drift velocity is 104 cms. The electron mobility is

A. 4396 cm<sup>2</sup>/V<sup>-s</sup> 2
B. 3 x 10<sup>4</sup> cm<sup>2</sup>/V<sup>-s</sup>
C. 6 x 10<sup>4</sup> cm<sup>2</sup>V<sup>-s</sup>
D. 3333 cm<sup>2</sup>/V<sup>-s</sup>
Answer» E.
3.

A silicon sample doped n type at 10^18 cm3 have a resistance of 10 ohm. The sample has an area of 10^(-6) cm2 and a length of 10 m . The doping efficiency of the sample is ( n = 800 cm2/V-s )

A. 43.2%
B. 78.1%
C. 96.3%
D. 54.3%
Answer» C. 96.3%
4.

Two semiconductor material have exactly the same properties except that material A has a bandgap of 1.0
eV and material B has a bandgap energy of 1.2 eV. The ratio of intrinsic concentration of material A to that of

A. nmaterial B is
B. 2016
C. 47.5
D. 58.23
E. 1048
Answer» C. 47.5