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This section includes 4 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits knowledge and support exam preparation. Choose a topic below to get started.
1. |
A particular intrinsic semiconductor has a resistivity of 50 (ohm-cm) at T = 300 K and 5 (ohm-cm) at T = 330 K. If change in mobility with temperature is neglected, the bandgap energy of the semiconductor is |
A. | 1.9 eV |
B. | 1.3 eV |
C. | 2.6 eV |
D. | 0.64 eV |
Answer» C. 2.6 eV | |
2. |
Six volts is applied across a 2 cm long semiconductor bar. The average drift velocity is 104 cms. The electron mobility is |
A. | 4396 cm<sup>2</sup>/V<sup>-s</sup> 2 |
B. | 3 x 10<sup>4</sup> cm<sup>2</sup>/V<sup>-s</sup> |
C. | 6 x 10<sup>4</sup> cm<sup>2</sup>V<sup>-s</sup> |
D. | 3333 cm<sup>2</sup>/V<sup>-s</sup> |
Answer» E. | |
3. |
A silicon sample doped n type at 10^18 cm3 have a resistance of 10 ohm. The sample has an area of 10^(-6) cm2 and a length of 10 m . The doping efficiency of the sample is ( n = 800 cm2/V-s ) |
A. | 43.2% |
B. | 78.1% |
C. | 96.3% |
D. | 54.3% |
Answer» C. 96.3% | |
4. |
Two semiconductor material have exactly the same properties except that material A has a bandgap of 1.0
|
A. | nmaterial B is |
B. | 2016 |
C. | 47.5 |
D. | 58.23 |
E. | 1048 |
Answer» C. 47.5 | |