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This section includes 11 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communications Questions and Answers knowledge and support exam preparation. Choose a topic below to get started.
1. |
Compute depletion region width of a p-i-n photodiode with 3dB bandwidth of 1.91×108and carrier velocity of 2×104ms-s. |
A. | 1.66×10-5 |
B. | 3.2×10-3 |
C. | 2×10-5 |
D. | 2.34×104 |
Answer» B. 3.2×10-3 | |
2. |
Determine carrier velocity of a p-i-n photodiode where 3dB bandwidth is1.9×108Hz and depletion region width of 24μm. |
A. | 93.43×10-5 |
B. | 29.55×10-3 |
C. | 41.56×10-3 |
D. | 65.3×10-4 |
Answer» C. 41.56×10-3 | |
3. |
Determine maximum response time for a p-i-n photodiode having width of 28×10-6m and carrier velocity of 4×104ms-1. |
A. | 105.67 MHz |
B. | 180.43 MHz |
C. | 227.47 MHz |
D. | 250.65 MHz |
Answer» D. 250.65 MHz | |
4. |
Determine response time of p-i-n photodiode if it has 3 dB bandwidth of 1.98×108Hz. |
A. | 5.05×10-6sec |
B. | 5.05×10-7Sec |
C. | 5.05×10-7sec |
D. | 5.05×10-8Sec |
Answer» D. 5.05×10-8Sec | |
5. |
Determine permittivity of p-i-n photodiode with junction capacitance of 5pF, area of 0.62×10-6m2 and intrinsic region width of 28 μm. |
A. | 7.55×10-12 |
B. | 2.25×10-10 |
C. | 5×10-9 |
D. | 8.5×10-12 |
Answer» C. 5×10-9 | |
6. |
Compute intrinsic region width of p-i-n photodiode having junction capacitance of 4pF and material permittivity of 16.5×10-13Fcm-1 and area of 0.55×10-6m2. |
A. | 7.45×10-6 |
B. | 2.26×10-7 |
C. | 4.64×10-7 |
D. | 5.65×10-6 |
Answer» C. 4.64×10-7 | |
7. |
Determine the area where permittivity of material is 15.5×10-15Fcm-1 and width of 25×10-6 and junction capacitance is 5pF. |
A. | 8.0645×10-5 |
B. | 5.456×10-6 |
C. | 3.0405×10-2 |
D. | 8.0645×10-3 |
Answer» E. | |
8. |
Compute junction capacitance for a p-i-n photodiode if it has area of 0.69×10-6m2, permittivity of 10.5×10-13Fcm-1 and width of 30μm. |
A. | 3.043×10-5 |
B. | 2.415×10-7 |
C. | 4.641×10-4 |
D. | 3.708×10-5 |
Answer» C. 4.641×10-4 | |
9. |
Determine velocity of electron if drift time is 2×10-10s and intrinsic region width of 25×10-6μm. |
A. | 12.5×104 |
B. | 11.5×104 |
C. | 14.5×104 |
D. | 13.5×104 |
Answer» B. 11.5×104 | |
10. |
Determine intrinsic region width for a photodiode having drift time of 4×10-10 s and electron velocity of 2×10-10ms-1. |
A. | 3×10-5M |
B. | 8×10-5M |
C. | 5×10-5M |
D. | 7×10-5M |
Answer» C. 5×10-5M | |
11. |
Determine drift time for carrier across depletion region for photodiode having intrinsic region width of 30μm and electron drift velocity of 105 ms-1. |
A. | 1×10-10 Seconds |
B. | 2×10-10 Seconds |
C. | 3×10-10 Seconds |
D. | 4×10-10 Seconds |
Answer» D. 4×10-10 Seconds | |