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This section includes 8 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communications knowledge and support exam preparation. Choose a topic below to get started.
1. |
APDs do not operate at signal wavelengths between 1.3 and 1.6 m. |
A. | True |
B. | False |
Answer» B. False | |
2. |
_________________ APDs are recognized for their high gain-bandwidth products. |
A. | GaAs |
B. | Alloy-made |
C. | Germanium |
D. | Silicon |
Answer» E. | |
3. |
__________ determines a higher transmission rate related to the gain of the APD device. |
A. | Attenuation |
B. | Gain-bandwidth product |
C. | Dispersion mechanism |
D. | Ionization coefficient |
Answer» C. Dispersion mechanism | |
4. |
For silicon APDs, the value of excess noise factor is between _________ |
A. | 0.001 and 0.002 |
B. | 0.5 and 0.7 |
C. | 0.02 and 0.10 |
D. | 1 and 2 |
Answer» D. 1 and 2 | |
5. |
____________ is dependent upon the detector material, the shape of the electric field profile within the device. |
A. | SNR |
B. | Excess avalanche noise factor |
C. | Noise gradient |
D. | Noise power |
Answer» C. Noise gradient | |
6. |
______________ is used in the specification of optical detectors. |
A. | Noise equivalent power |
B. | Polarization |
C. | Sensitivity |
D. | Electron movement |
Answer» B. Polarization | |
7. |
________________ is a combination of shunt capacitances and resistances. |
A. | Attenuation |
B. | Shunt impedance |
C. | Shunt admittance |
D. | Thermal capacitance |
Answer» D. Thermal capacitance | |
8. |
In a silicon p-i-n photodiode, if load resistance is 4 k , temperature is 293 K, bandwidth is 4MHz, find the thermal noise in the load resistor. |
A. | 1.8 10<sup>-16</sup>A<sup>2</sup> |
B. | 1.23 10<sup>-17</sup>A<sup>2</sup> |
C. | 1.65 10<sup>-16</sup>A<sup>2</sup> |
D. | 1.61 10<sup>-17</sup>A<sup>2</sup> |
Answer» E. | |