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This section includes 5 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits knowledge and support exam preparation. Choose a topic below to get started.
1. |
Rate of change of concentration per unit length in a semiconductor is called as. |
A. | Concentration change |
B. | Concentration mixture |
C. | Concentration gradient |
D. | Concentration variant |
Answer» D. Concentration variant | |
2. |
When there is an open circuit what will be the net hole current. |
A. | 5A |
B. | 0.05A |
C. | 0.5A |
D. | 0A |
Answer» E. | |
3. |
The drift velocity is 5V and the applied electric field intensity 20v/m what will be the mobility of charge carriers. |
A. | 100 m<sup>2</sup>/ (vs) |
B. | 4 m<sup>2</sup>/ (vs) |
C. | 15 m<sup>2</sup>/ (vs) |
D. | 0.25 m<sup>2</sup>/ (vs) |
Answer» E. | |
4. |
Which of the factors doesn t change the diode current. |
A. | Temperature |
B. | External voltage applied to the diode |
C. | Boltzmann s constant |
D. | Resistance |
Answer» E. | |
5. |
What is the thickness of space charge region or transition region in P-N junction diode? |
A. | 1 micron |
B. | 5 micron |
C. | 10 micron |
D. | 2.876 micron |
Answer» B. 5 micron | |