Explore topic-wise MCQs in Power Electronics.

This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.

1.

A_POWER_BJT_IS_USED_AS_A_POWER_CONTROL_SWITCH_BY_BIASING_IT_IN_THE_CUT_OFF_REGION_(OFF_STATE)_OR_IN_THE_SATURATION_REGION_(ON_STATE)._IN_THE_ON_STATE?$

A. both the base-emitter & base-collector junctions are forward biased
B. the base-emitter junction is reverse biased, and the base collector junction is forward biased
C. the base-emitter junction is forward biased, and the base collector junction is reversed biased
D. both the base-collector & the base-emitter junctions are reversed biased
Answer» B. the base-emitter junction is reverse biased, and the base collector junction is forward biased
Discussion
2.

THE_VALUE_OF_‚ÂÀ√≠‚ÄÖ√¢¬ß_IS_GIVEN_BY_THE_EXPRESSION?$#

A. I<sub>C</sub>/I<sub>B</sub>
B. I<sub>C</sub>/I<sub>E</sub>
C. I<sub>E</sub>/I<sub>C</sub>
D. I<sub>E</sub>/I<sub>B</sub>
Answer» B. I<sub>C</sub>/I<sub>E</sub>
Discussion
3.

The forward current gain α is given b?#

A. I<sub>C</sub>/I<sub>B</sub>
B. I<sub>C</sub>/I<sub>E</sub>
C. I<sub>E</sub>/I<sub>C</sub>
D. I<sub>E</sub>/I<sub>B</sub>
Answer» C. I<sub>E</sub>/I<sub>C</sub>
Discussion
4.

For a power transistor, if the base current IB is increased keeping VCE constant, then

A. I<sub>C</sub> increases
B. I<sub>C</sub> decreases
C. I<sub>C</sub> remains constant
D. none of the mentioned
Answer» B. I<sub>C</sub> decreases
Discussion
5.

In a power transistor, the IB vs VBE curve is

A. a parabolic curve
B. an exponentially decaying curve
C. resembling the diode curve
D. a straight line Y = I<sub>B</sub>
Answer» D. a straight line Y = I<sub>B</sub>
Discussion
6.

In a power transistor, _________ is the controlling parameter.

A. V<sub>BE</sub>
B. V<sub>CE</sub>
C. I<sub>B</sub>
D. I<sub>C</sub>
Answer» D. I<sub>C</sub>
Discussion
7.

A power transistor is a _________ device.

A. two terminal, bipolar, voltage controlled
B. two terminal, unipolar, current controlled
C. three terminal, unipolar, voltage controlled
D. three terminal, bipolar, current controlled
Answer» E.
Discussion
8.

In a power transistor, ____ is the controlled parameter.

A. V<sub>BE</sub>
B. V<sub>CE</sub>
C. I<sub>B</sub>
D. I<sub>C</sub>
Answer» E.
Discussion
9.

A power transistor is a

A. three layer, three junction device
B. three layer, two junction device
C. two layer, one junction device
D. four layer, three junction device
Answer» C. two layer, one junction device
Discussion
10.

Which of the following devices does not belong to the transistor family?

A. IGBT
B. MOSFET
C. GTO
D. BJT
Answer» D. BJT
Discussion