MCQOPTIONS
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MCQOPTIONS
This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
In a power transistor _____ is controlling parameter |
| A. | VBE |
| B. | VCE |
| C. | IB |
| D. | IC |
| Answer» D. IC | |
| 2. |
Identify the device whose symbol is given below |
| A. | npn transistor |
| B. | pnp transistor |
| C. | MOSFET |
| D. | IGBT |
| Answer» E. | |
| 3. |
Following is the demerit of IGBT: |
| A. | High peak current capability |
| B. | Low turn off time |
| C. | Ease of gate drive |
| D. | High turn off time |
| Answer» E. | |
| 4. |
Directions: It consists of two statements, one labelled as the ‘Statement (I)’ and the other as ‘Statement (II). Examine these two statements carefully and select the answer using the codes given below:Statement (I): The ‘turn-on’ and ‘turn-off’ time of a MOSFET is very small.Statement (II): The MOSFET is a majority-carrier device. |
| A. | Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I) |
| B. | Both Statement (I) and Statement (II) are individually true but Statement (II) is not the correct explanation of Statement (I) |
| C. | Statement (I) is true but Statement (II) is false |
| D. | Statement (I) is false but Statement (II) is true |
| Answer» B. Both Statement (I) and Statement (II) are individually true but Statement (II) is not the correct explanation of Statement (I) | |
| 5. |
For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE? |
| A. | All the four are majority carrier devices. |
| B. | All the four are minority carrier devices. |
| C. | IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier devices. |
| D. | MOSFET is majority carrier device, whereas IGBT, Diode Thyristor are minority carrier devices. |
| Answer» E. | |
| 6. |
A MOSFET is |
| A. | Minority carrier device |
| B. | Majority carrier device |
| C. | Both majority and minority carrier device |
| D. | None of the above |
| Answer» C. Both majority and minority carrier device | |
| 7. |
Figure shows 4 electronic switches (i), (ii), (iii) and (iv). Which of the switches can blockVoltages of either polarity(applied between terminals ‘a’ and ‘b’) when the active device is in OFF state? |
| A. | (i), (ii) and (iii) |
| B. | (ii), (iii) and (iv) |
| C. | (ii) and (iii) |
| D. | (i) and (iv) |
| Answer» D. (i) and (iv) | |
| 8. |
As compared to power MOSFET, a BJT has |
| A. | Higher switching losses but lower conduction losses |
| B. | Higher switching losses and higher conduction losses |
| C. | Lower switching losses and Lower conduction losses |
| D. | Lower switching losses but higher conduction losses |
| Answer» B. Higher switching losses and higher conduction losses | |
| 9. |
In an IGBT cell the collector and emitter are respectively |
| A. | n and p |
| B. | n+ and p+ |
| C. | p and n |
| D. | p+ and n+ |
| Answer» E. | |
| 10. |
A power BJT has Collector current IC = 20 A at IB = 2.5 A and reverse saturation current ICS = 15 mA. Find out Current gain β? |
| A. | 8 |
| B. | 7.95 |
| C. | 7 |
| D. | 8.95 |
| Answer» C. 7 | |