Population inversion is obtained at a p-n junction by __________

Heavy doping of p-type material

Heavy doping of n-type material

Light doping of p-type material

Heavy doping of both p-type and n-type material

The energy-level occupation for a semiconductor in thermal equilibrium is described by the __________

Cumulative distribution function

Boltzmann distribution function

Probability distribution function

Fermi-Dirac distribution function

Cumulative distribution function

Explore topic-wise MCQs in Optical Communications.

This section includes 6 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communications knowledge and support exam preparation. Choose a topic below to get started.

1.	A GaAs injection laser has a threshold current density of 2.5*10³Acm^-2 and length and width of the cavity is 240 m and 110 m respectively. Find the threshold current for the device.
A.	663 mA
B.	660 mA
C.	664 mA
D.	712 mA
Answer» C. 664 mA

Discussion

2.	Population inversion is obtained at a p-n junction by __________
A.	Heavy doping of p-type material
B.	Heavy doping of n-type material
C.	Light doping of p-type material
D.	Heavy doping of both p-type and n-type material
Answer» E.

Discussion

3.	Calculate the radioactive minority carrier lifetime in gallium arsenide when the minority carriers are electrons injected into a p-type semiconductor region which has a hole concentration of 10¹⁸cm^-3. The recombination coefficient for gallium arsenide is 7.21*10^-10cm³s^-1.
A.	2ns
B.	1.39ns
C.	1.56ns
D.	2.12ms
Answer» C. 1.56ns

Discussion

4.	The majority of the carriers in a p-type semiconductor are __________
A.	Holes
B.	Electrons
C.	Photons
D.	Neutrons
Answer» B. Electrons

Discussion

5.	The energy-level occupation for a semiconductor in thermal equilibrium is described by the __________
A.	Boltzmann distribution function
B.	Probability distribution function
C.	Fermi-Dirac distribution function
D.	Cumulative distribution function
Answer» D. Cumulative distribution function

Discussion

6.	A perfect semiconductor crystal containing no impurities or lattice defects is called as __________
A.	Intrinsic semiconductor
B.	Extrinsic semiconductor
C.	Excitation
D.	Valence electron
Answer» B. Extrinsic semiconductor

Discussion

Explore topic-wise MCQs in Optical Communications.

A GaAs injection laser has a threshold current density of 2.5*103Acm-2 and length and width of the cavity is 240 m and 110 m respectively. Find the threshold current for the device.

Population inversion is obtained at a p-n junction by __________

Calculate the radioactive minority carrier lifetime in gallium arsenide when the minority carriers are electrons injected into a p-type semiconductor region which has a hole concentration of 1018cm-3. The recombination coefficient for gallium arsenide is 7.21*10-10cm3s-1.

The majority of the carriers in a p-type semiconductor are __________

The energy-level occupation for a semiconductor in thermal equilibrium is described by the __________

A perfect semiconductor crystal containing no impurities or lattice defects is called as __________

A GaAs injection laser has a threshold current density of 2.5*10³Acm^-2 and length and width of the cavity is 240 m and 110 m respectively. Find the threshold current for the device.

Calculate the radioactive minority carrier lifetime in gallium arsenide when the minority carriers are electrons injected into a p-type semiconductor region which has a hole concentration of 10¹⁸cm^-3. The recombination coefficient for gallium arsenide is 7.21*10^-10cm³s^-1.