MCQOPTIONS
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MCQOPTIONS
This section includes 6 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communications knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
A GaAs injection laser has a threshold current density of 2.5*103Acm-2 and length and width of the cavity is 240 m and 110 m respectively. Find the threshold current for the device. |
| A. | 663 mA |
| B. | 660 mA |
| C. | 664 mA |
| D. | 712 mA |
| Answer» C. 664 mA | |
| 2. |
Population inversion is obtained at a p-n junction by __________ |
| A. | Heavy doping of p-type material |
| B. | Heavy doping of n-type material |
| C. | Light doping of p-type material |
| D. | Heavy doping of both p-type and n-type material |
| Answer» E. | |
| 3. |
Calculate the radioactive minority carrier lifetime in gallium arsenide when the minority carriers are electrons injected into a p-type semiconductor region which has a hole concentration of 1018cm-3. The recombination coefficient for gallium arsenide is 7.21*10-10cm3s-1. |
| A. | 2ns |
| B. | 1.39ns |
| C. | 1.56ns |
| D. | 2.12ms |
| Answer» C. 1.56ns | |
| 4. |
The majority of the carriers in a p-type semiconductor are __________ |
| A. | Holes |
| B. | Electrons |
| C. | Photons |
| D. | Neutrons |
| Answer» B. Electrons | |
| 5. |
The energy-level occupation for a semiconductor in thermal equilibrium is described by the __________ |
| A. | Boltzmann distribution function |
| B. | Probability distribution function |
| C. | Fermi-Dirac distribution function |
| D. | Cumulative distribution function |
| Answer» D. Cumulative distribution function | |
| 6. |
A perfect semiconductor crystal containing no impurities or lattice defects is called as __________ |
| A. | Intrinsic semiconductor |
| B. | Extrinsic semiconductor |
| C. | Excitation |
| D. | Valence electron |
| Answer» B. Extrinsic semiconductor | |