Explore topic-wise MCQs in Electronic Devices and Circuits Questions and Answers.

This section includes 3 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits Questions and Answers knowledge and support exam preparation. Choose a topic below to get started.

1.

When the voltage across the drain and the source (VDS) is increased from a small amount (assuming that the gate voltage, VG with respect to the source is higher than the threshold voltage, Vt), then the width of the induced channel in NMOS (assume that VDS is always small when compared to the Vov)

A. Will remain as was before
B. Will become non uniform and will take a tapered shape with deepest width at the drain
C. Will become non uniform and will take a tapered shape with deepest width at the source
D. Will remain uniform but the width of the channel will increase
Answer» D. Will remain uniform but the width of the channel will increase
Discussion
2.

With the potential difference between the source and the drain kept small (VDS is small), the MOSFET behaves as a resistance whose value varies __________ with the overdrive voltage

A. Linearly
B. Inversely
C. Exponentially
D. Logarithmically
Answer» C. Exponentially
Discussion
3.

The SI Units of the Process transconductance Parameter (k’) is

A. V2/A
B. A/V2
C. V/A
D. A/V
Answer» C. V/A
Discussion