Explore topic-wise MCQs in Electronic Devices and Circuits.

This section includes 5 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits knowledge and support exam preparation. Choose a topic below to get started.

1.

At channel pinch off

A. The width of the induced channel becomes non linear
B. The width of the induced channel becomes very large (resulting in very large resistance and very low, practically zero, current)
C. width becomes 1/e times the maximum possible width
D. The width of the induced channel becomes zero and the current saturates
Answer» E.
Discussion
2.

The saturation current of the MOSFET is the value of the current when

A. The voltage between the drain and drain becomes equal to the overdrive voltage
B. The voltage between the drain and drain becomes equal to the threshold voltage
C. The voltage between the drain and drain becomes equal to the voltage applied to the gate
D. The voltage between the drain and drain becomes equal to difference the overdrive voltage and the threshold voltage
Answer» B. The voltage between the drain and drain becomes equal to the threshold voltage
Discussion
3.

When the voltage across the drain and the source (VDS) is increased from a small amount (assuming that the gate voltage, VG with respect to the source is higher than the threshold voltage, Vt), then the width of the induced channel in NMOS (assume that VDS is always small when compared to the Vov)

A. Will remain as was before
B. Will become non uniform and will take a tapered shape with deepest width at the drain
C. Will become non uniform and will take a tapered shape with deepest width at the source
D. Will remain uniform but the width of the channel will increase
Answer» D. Will remain uniform but the width of the channel will increase
Discussion
4.

The SI Units of the Process transconductance Parameter (k ) is

A. V<sup>2</sup>/A
B. A/V<sup>2</sup>
C. V/A
D. A/V
Answer» C. V/A
Discussion
5.

For NMOS transistor which of the following is not true?

A. The substrate is of p-type semiconductor
B. Inversion layer or induced channel is of n type
C. Threshold voltage is negative
D. None of the mentioned
Answer» D. None of the mentioned
Discussion