Explore topic-wise MCQs in Electronic Devices and Circuits Questions and Answers.

This section includes 5 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits Questions and Answers knowledge and support exam preparation. Choose a topic below to get started.

1.

The current iD is?

A. Depends linearly on VOV in the saturation region
B. Depends on the square of VOV in the saturation region
C. Depends inversely on VOV in the triode region
D. None of the mentioned
Answer» C. Depends inversely on VOV in the triode region
Discussion
2.

Which of the following is true for the saturation region?

A. VDG ≤ |Vtp|
B. VSD ≤| VOV|
C. VDG < |Vtp|
D. VSD <| VOV|
Answer» B. VSD ≤| VOV|
Discussion
3.

Which of the following is true for the triode region?

A. VDG > Vtp
B. VSD < VOV
C. ID ∝ VOV
D. None of the mentioned
Answer» E.
Discussion
4.

An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOV and a drain current ID. If is VOV is doubled, and we must maintain operation at the edge of saturation, what value of drain current results?

A. 0.25ID
B. 0.5ID
C. 2ID
D. 4ID
Answer» D. 4ID
Discussion
5.

An n-channel MOSFET operating with VOV=0.5V exhibits a linear resistance = 1 kΩ when VDS is very small. What is the value of the device transconductance parameter kn?

A. 2 mA/V2
B. 20 mA/V2
C. 0.2 A/V2
D. 2 A/V2
Answer» B. 20 mA/V2
Discussion