MCQOPTIONS
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MCQOPTIONS
This section includes 3 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOV and a drain current ID. If is VOV is doubled, and we must maintain operation at the edge of saturation, what value of drain current results? |
| A. | 0.25I<sub>D</sub> |
| B. | 0.5I<sub>D</sub> |
| C. | 2I<sub>D</sub> |
| D. | 4I<sub>D</sub> |
| Answer» D. 4I<sub>D</sub> | |
| 2. |
An n-channel MOSFET operating with VOV=0.5V exhibits a linear resistance = 1 k when VDS is very small. What is the value of the device transconductance parameter kn? |
| A. | 2 mA/V<sup>2</sup> |
| B. | 20 mA/V<sup>2</sup> |
| C. | 0.2 A/V<sup>2</sup> |
| D. | 2 A/V<sup>2</sup> |
| Answer» B. 20 mA/V<sup>2</sup> | |
| 3. |
In the saturation region of the MOSFET the saturation current is? |
| A. | Independent of the voltage difference between the source and the drain |
| B. | Depends directly on the voltage difference between the source and the drain |
| C. | Depends directly on the overdriving voltage |
| D. | Depends directly on the voltage supplied to the gate terminal |
| Answer» B. Depends directly on the voltage difference between the source and the drain | |