 
			 
			MCQOPTIONS
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				This section includes 8 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.
| 1. | THE_BASIC_ADVANTAGE_OF_THE_CMOS_TECHNOLOGY_IS_THAT?$ | 
| A. | It is easily available | 
| B. | It has small size | 
| C. | It has lower power consumption | 
| D. | It has better switching capabilities | 
| Answer» D. It has better switching capabilities | |
| 2. | The N-channel MOSFET is considered better than the P-channel MOSFET due to its$ | 
| A. | low noise levels | 
| B. | TTL compatibility | 
| C. | lower input impedance | 
| D. | faster operation | 
| Answer» E. | |
| 3. | How does the MOSFET differ from the JFET? | 
| A. | JFET has a p-n junction | 
| B. | They are both the same | 
| C. | JFET is small in size | 
| D. | MOSFET has a base terminal | 
| Answer» B. They are both the same | |
| 4. | For a MOSFET Vgs=3V, Idss=5A, and Id=2A. Find the pinch of voltage Vp | 
| A. | 4.08 | 
| B. | 8.16 | 
| C. | 16.32 | 
| D. | 0V | 
| Answer» C. 16.32 | |
| 5. | Consider an ideal MOSFET. If Vgs = 0V, then Id = ? | 
| A. | Zero | 
| B. | Maximum | 
| C. | Id(on) | 
| D. | Idd | 
| Answer» B. Maximum | |
| 6. | Which among the following devices is the most suited for high frequency applications? | 
| A. | BJT | 
| B. | IGBT | 
| C. | MOSFET | 
| D. | SCR | 
| Answer» D. SCR | |
| 7. | At turn-on the initial delay or turn on delay is the time required for the | 
| A. | input inductance to charge to the threshold value | 
| B. | input capacitance to charge to the threshold value | 
| C. | input inductance to discharge to the threshold value | 
| D. | input capacitance to discharge to the threshold value | 
| Answer» C. input inductance to discharge to the threshold value | |
| 8. | In the output characteristics of a MOSFET with low values of Vds, the value of the on-state resistance is | 
| A. | Vds/Ig | 
| B. | Vds/Id | 
| C. | 0 | 
| D. | ‚àû | 
| Answer» C. 0 | |