MCQOPTIONS
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MCQOPTIONS
This section includes 13 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communication knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
There must be improvement in __________ of an optical fiber communication system. |
| A. | Detector |
| B. | Responsivity |
| C. | Absorption Coefficient |
| D. | Band gap energy |
| Answer» B. Responsivity | |
| 2. |
__________ is less than or unity for photo detectors. |
| A. | Absorption coefficient |
| B. | Band gap energy |
| C. | Responsivity |
| D. | Quantum efficiency |
| Answer» E. | |
| 3. |
The important parameter for exciting an electron with energy required from valence band to conduction band is? |
| A. | Wavelength |
| B. | Absorption coefficient |
| C. | Responsivity |
| D. | Band gap energy |
| Answer» B. Absorption coefficient | |
| 4. |
HgCdTe material system is utilized to fabricate long-wavelength photodiodes. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 5. |
THERE_MUST_BE_IMPROVEMENT_IN____________OF_AN_OPTICAL_FIBER_COMMUNICATION_SYSTEM.?$ |
| A. | Detector |
| B. | Responsivity |
| C. | Absorption Coefficient |
| D. | Band gap energy |
| Answer» B. Responsivity | |
| 6. |
__________ is less than or unity for photo detectors? |
| A. | Absorption coefficient |
| B. | Band gap energy |
| C. | Responsivity |
| D. | Quantum efficiency |
| Answer» E. | |
| 7. |
The important parameter for exciting an electron with energy required from valence band to conduction band is |
| A. | Wavelength |
| B. | Absorption coefficient |
| C. | Responsivity |
| D. | Band gap energy |
| Answer» B. Absorption coefficient | |
| 8. |
When determining performance of a photo detector ___________ is often used. |
| A. | No. of incident photon |
| B. | No. of electrons collected |
| C. | Responsivity |
| D. | Absorption coefficient |
| Answer» D. Absorption coefficient | |
| 9. |
The detection mechanism in ____________ relies on photo excitation of electrons from confined states in conduction band quantum wells. |
| A. | p-i-n detector |
| B. | Quantum-dot photo detector |
| C. | p-n photodiode |
| D. | Avalanche photodiodes |
| Answer» C. p-n photodiode | |
| 10. |
Avalanche photodiodes based on HgCdTe are used for ______________ in both the near and far infrared. |
| A. | Dispersion |
| B. | Dislocation |
| C. | Ionization |
| D. | Array applications |
| Answer» E. | |
| 11. |
HgCdTe material system is utilized to fabricate long-wavelength photodiodes. State whether the given statement is true or false. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 12. |
What is generally used to accommodate a lattice mismatch? |
| A. | Alloys |
| B. | Attenuator |
| C. | Graded buffer layer |
| D. | APD array |
| Answer» D. APD array | |
| 13. |
In the development of photodiodes for mid-infrared and far-infrared transmission systems, lattice matching has been a problem when operating at wavelengths ____________ |
| A. | 1 µm |
| B. | Greater than 2 µm |
| C. | 2 µm |
| D. | 0.5 µm |
| Answer» C. 2 ¬¨¬®¬¨¬µm | |