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This section includes 9 Mcqs, each offering curated multiple-choice questions to sharpen your Engineering Physics knowledge and support exam preparation. Choose a topic below to get started.
1. |
Which of the following is not a characteristic of LED? |
A. | Fast action |
B. | High Warm-up time |
C. | Low operational voltage |
D. | Long life |
Answer» C. Low operational voltage | |
2. |
What is the bandwidth of the emitted light in an LED? |
A. | 1 nm to 10 nm |
B. | 10 nm to 50 nm |
C. | 50 nm to 100 nm |
D. | 100 nm to 500 nm |
Answer» C. 50 nm to 100 nm | |
3. |
Which process of the Electron-hole pair is responsible for emitting of light? |
A. | Generation |
B. | Movement |
C. | Recombination |
D. | Diffusion |
Answer» D. Diffusion | |
4. |
Increase in the forward current always increases the intensity of an LED. |
A. | True |
B. | False |
Answer» C. | |
5. |
What should be the biasing of the LED? |
A. | Forward bias |
B. | Reverse bias |
C. | Forward bias than Reverse bias |
D. | No biasing required |
Answer» B. Reverse bias | |
6. |
What should be the band gap of the semiconductors to be used as LED? |
A. | 0.5 eV |
B. | 1 eV |
C. | 1.5 eV |
D. | 1.8 eV |
Answer» E. | |
7. |
The reverse breakdown voltage of LED is very low. |
A. | True |
B. | False |
Answer» B. False | |
8. |
Which of the following materials can be used to produce infrared LED? |
A. | Si |
B. | GaAs |
C. | CdS |
D. | PbS |
Answer» C. CdS | |
9. |
A light emitting diode is _________ |
A. | Heavily doped |
B. | Lightly doped |
C. | Intrinsic semiconductor |
D. | Zener diode |
Answer» B. Lightly doped | |