We cannot use h-parameter model in high frequency analysis because ____________

Junction capacitances have to be included in it

They all can be ignored for high frequencies

Junction capacitances are not included in it

Junction capacitances have to be included in it

AC analysis is difficult for high frequency using it

Explore topic-wise MCQs in Analog Circuits.

This section includes 7 Mcqs, each offering curated multiple-choice questions to sharpen your Analog Circuits knowledge and support exam preparation. Choose a topic below to get started.

1.	Given a MOSFET where gate to source capacitance is 300 pF and gate to drain capacitance is 500 pF. Calculate the gain bandwidth product if the transconductance is 30 m ^-1.
A.	5.98 Mhz
B.	4.9 Mhz
C.	6.5Mhz
D.	5.22Mhz
Answer» B. 4.9 Mhz

Discussion

2.	Gain bandwidth frequency is GBP= 3000 Mhz. The cut-off frequency is f=10Mhz. What is the CE short circuit current gain at the cutoff frequency?
A.	212
B.	220
C.	300
D.	200
Answer» B. 220

Discussion

3.	Given that =200, input frequency is f = 20Mhz and short circuit current gain is A = 100. What is the unity gain frequency?
A.	2308 Mhz
B.	2000 Mhz
C.	2508 Mhz
D.	3000 Mhz
Answer» B. 2000 Mhz

Discussion

4.	For given BJT, =200. The applied input frequency is 20 Mhz and net internal capacitance is 100 pF. What is the CE short circuit current gain at cut-off frequency?
A.	200
B.	100
C.	141.42
D.	440.2
Answer» D. 440.2

Discussion

5.	Given that transition capacitance is 5 pico F and diffusion capacitance is 80 pico F, and base emitter dynamic resistance is 1500 , find the cut-off frequency.
A.	7.8 x 10<sup>6</sup> rad/s
B.	8.0 x 10<sup>6</sup> rad/s
C.	49.2 x 10<sup>6</sup> rad/s
D.	22.7 x 10<sup>6</sup> rad/s
Answer» B. 8.0 x 10<sup>6</sup> rad/s

Discussion

6.	Consider a CE circuit, where trans-conductance is 50m ^-1, diffusion capacitance is 100 pF, transition capacitance is 3 pF. I_B = 20 A. Given base emitter dynamic resistance, r_be = 1000 , input V_I is 20*sin(10⁷t). What is the short circuit current gain?
A.	30
B.	35
C.	40
D.	100
Answer» C. 40

Discussion

7.	We cannot use h-parameter model in high frequency analysis because ____________
A.	They all can be ignored for high frequencies
B.	Junction capacitances are not included in it
C.	Junction capacitances have to be included in it
D.	AC analysis is difficult for high frequency using it
Answer» C. Junction capacitances have to be included in it

Discussion

Explore topic-wise MCQs in Analog Circuits.

Given a MOSFET where gate to source capacitance is 300 pF and gate to drain capacitance is 500 pF. Calculate the gain bandwidth product if the transconductance is 30 m -1.

Gain bandwidth frequency is GBP= 3000 Mhz. The cut-off frequency is f=10Mhz. What is the CE short circuit current gain at the cutoff frequency?

Given that =200, input frequency is f = 20Mhz and short circuit current gain is A = 100. What is the unity gain frequency?

For given BJT, =200. The applied input frequency is 20 Mhz and net internal capacitance is 100 pF. What is the CE short circuit current gain at cut-off frequency?

Given that transition capacitance is 5 pico F and diffusion capacitance is 80 pico F, and base emitter dynamic resistance is 1500 , find the cut-off frequency.

Consider a CE circuit, where trans-conductance is 50m -1, diffusion capacitance is 100 pF, transition capacitance is 3 pF. IB = 20 A. Given base emitter dynamic resistance, rbe = 1000 , input VI is 20*sin(107t). What is the short circuit current gain?

We cannot use h-parameter model in high frequency analysis because ____________

Given a MOSFET where gate to source capacitance is 300 pF and gate to drain capacitance is 500 pF. Calculate the gain bandwidth product if the transconductance is 30 m ^-1.

Consider a CE circuit, where trans-conductance is 50m ^-1, diffusion capacitance is 100 pF, transition capacitance is 3 pF. I_B = 20 A. Given base emitter dynamic resistance, r_be = 1000 , input V_I is 20*sin(10⁷t). What is the short circuit current gain?