MCQOPTIONS
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MCQOPTIONS
This section includes 15 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Choose the correct statement:GTOs have _________ as compared to the CTs. |
| A. | less on-state voltage drop |
| B. | less gate drive losses |
| C. | higher reverse blocking capabilities |
| D. | faster switching speed |
| Answer» E. | |
| 2. |
In case of the two-transistor model (T1 & T2) of GTO with anode-short, the anode-short is placed between the |
| A. | emitter of T1 & T2 |
| B. | emitter of T1 & base of T2 |
| C. | emitter of T1 & base of T1 |
| D. | emitter of T1 & collector of T2 |
| Answer» D. emitter of T1 & collector of T2 | |
| 3. |
Latching current for the GTOs is ________ as compared to CTs (Conventional thyristors). |
| A. | more |
| B. | less |
| C. | constant |
| D. | cannot be said |
| Answer» B. less | |
| 4. |
A GTO can be represented by two transistors T1 & T2. The current gain of both transistors are α1 and α2 respectively. A low value of gate current requires |
| A. | low value of α1 and α2 |
| B. | low value of α1 and high value of α2 |
| C. | high value of α1 and low value of α2 |
| D. | high values of α1 and α2 |
| Answer» C. high value of α1 and low value of α2 | |
| 5. |
The turn-off gain βoff of the GTO is given by |
| A. | Ig/Ia |
| B. | Ia/Ig |
| C. | Vg/Va |
| D. | Vg/Va |
| Answer» C. Vg/Va | |
| 6. |
In a GTO the n+ layer forms the |
| A. | anode & gate |
| B. | cathode & gate |
| C. | cathode |
| D. | gate |
| Answer» D. gate | |
| 7. |
IN_CASE_OF_THE_TWO-TRANSISTOR_MODEL_(T1_&_T2)_OF_GTO_WITH_ANODE-SHORT,_THE_ANODE-SHORT_IS_PLACED_BETWEEN_THE?$ |
| A. | emitter of T1 & T2 |
| B. | emitter of T1 & base of T2 |
| C. | emitter of T1 & base of T1 |
| D. | emitter of T1 & collector of T2 |
| Answer» D. emitter of T1 & collector of T2 | |
| 8. |
Latching current for the GTOs is ________ as compared to CTs (Conventional thyristors)? |
| A. | more |
| B. | less |
| C. | constant |
| D. | cannot be said |
| Answer» B. less | |
| 9. |
Gold doped GTOs have _____________ as compared to the conventional GTOs |
| A. | high turn-off time |
| B. | low negative gate current requirement |
| C. | low reverse voltage blocking capabilities |
| D. | lower positive gate current requirement |
| Answer» C. low reverse voltage blocking capabilities | |
| 10. |
A GTO can be represented by two transistors T1 & T2. The current gain of both transistors are α1 and α2 respectively. A low value of gate current requires$ |
| A. | low value of α1 and α2 |
| B. | low value of α1 and high value of α2 |
| C. | high value of α1 and low value of α2 |
| D. | high values of α1 and α2 |
| Answer» C. high value of ‚âà√≠¬¨¬±1 and low value of ‚âà√≠¬¨¬±2 | |
| 11. |
The turn-off gain βoff of the GTO is given by$ |
| A. | I<sub>g</sub>/I<sub>a</sub> |
| B. | I<sub>a</sub>/I<sub>g</sub> |
| C. | V<sub>g</sub>/V<sub>a</sub> |
| D. | V<sub>g</sub>/V<sub>a</sub> |
| Answer» C. V<sub>g</sub>/V<sub>a</sub> | |
| 12. |
In a GTO the n+ layer forms the |
| A. | anode & gate |
| B. | cathode & gate |
| C. | cathode |
| D. | gate |
| Answer» D. gate | |
| 13. |
The anode current is ideally limited by the |
| A. | gate pulse amplitude |
| B. | internal impedance of the device |
| C. | load Impedance |
| D. | gate circuit impedance |
| Answer» D. gate circuit impedance | |
| 14. |
The GTO can be turned off |
| A. | by a positive gate pulse |
| B. | by a negative gate pulse |
| C. | by a negative anode-cathode voltage |
| D. | by removing the gate pulse |
| Answer» C. by a negative anode-cathode voltage | |
| 15. |
The GTO (gate turn-off thyristor) is a |
| A. | p-n-p-n device |
| B. | p-n-p device |
| C. | p-metal-n device |
| D. | p-n single junction device |
| Answer» B. p-n-p device | |