MCQOPTIONS
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MCQOPTIONS
This section includes 234 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 201. |
There is a need of transformer for ……………….. |
| A. | half-wave rectifier |
| B. | centre-tap full-wave rectifier |
| C. | bridge full-wave rectifier |
| D. | none of the above |
| Answer» C. bridge full-wave rectifier | |
| 202. |
The ripple factor of a half-wave rectifier is ……………… |
| A. | 2 |
| B. | 1.21 |
| C. | 2.5 |
| D. | 0.48 |
| Answer» E. | |
| 203. |
The disadvantage of a half-wave rectifier is that the……………….` |
| A. | components are expensive |
| B. | diodes must have a higher power rating |
| C. | output is difficult to filter |
| D. | none of the above |
| Answer» D. none of the above | |
| 204. |
Mains a.c. power is converrted into d.c. power for …………… |
| A. | lighting purposes |
| B. | heaters |
| C. | using in electronic equipment |
| D. | none of the above |
| Answer» D. none of the above | |
| 205. |
………. rectifier has the lowest forward resistance |
| A. | solid state |
| B. | vacuum tube |
| C. | gas tube |
| D. | none of the above |
| Answer» B. vacuum tube | |
| 206. |
A zener diode has ………….. breakdown voltage |
| A. | undefined |
| B. | sharp |
| C. | Zero |
| D. | none of the above |
| Answer» C. Zero | |
| 207. |
A zener diode is …………………. device |
| A. | a non-linear |
| B. | a linear |
| C. | an amplifying |
| D. | none of the above |
| Answer» B. a linear | |
| 208. |
A series resistance is connected in the zener circuit to……….. |
| A. | properly reverse bias the zener |
| B. | protect the zener |
| C. | properly forward bias the zener |
| D. | none of the above |
| Answer» C. properly forward bias the zener | |
| 209. |
In the breakdown region, a zener didoe behaves like a …………… source. |
| A. | constant voltage |
| B. | constant current |
| C. | constant resistance |
| D. | none of the above |
| Answer» B. constant current | |
| 210. |
A zener diode utilizes ……….. characteristics for its operation. |
| A. | forward |
| B. | reverse |
| C. | both forward and reverse |
| D. | none of the above |
| Answer» C. both forward and reverse | |
| 211. |
A zener diode is always ………… connected. |
| A. | reverse |
| B. | forward |
| C. | either reverse or forward |
| D. | none of the above |
| Answer» B. forward | |
| 212. |
The doping level in a zener diode is …………… that of a crystal diode |
| A. | the same as |
| B. | less than |
| C. | more than |
| D. | none of the above |
| Answer» D. none of the above | |
| 213. |
A zener diode is used as ……………. |
| A. | an amplifier |
| B. | a voltage regulator |
| C. | a rectifier |
| D. | a multivibrator |
| Answer» C. a rectifier | |
| 214. |
A zener diode has ……….. |
| A. | one pn junction |
| B. | two pn junctions |
| C. | three pn junctions |
| D. | none of the above |
| Answer» B. two pn junctions | |
| 215. |
If the doping level in a crystal diode is increased, the width of depletion layer……….. |
| A. | remains the same |
| B. | is decreased |
| C. | in increased |
| D. | none of the above |
| Answer» D. none of the above | |
| 216. |
When a crystal diode is used as a rectifier, the most important consideration is ………. |
| A. | forward characteristic |
| B. | doping level |
| C. | reverse characteristic |
| D. | PIC rating |
| Answer» E. | |
| 217. |
A crystal diode utilises …………….. characteristic for rectification |
| A. | reverse |
| B. | forward |
| C. | forward or reverse |
| D. | none of the above |
| Answer» C. forward or reverse | |
| 218. |
A crystal diode is a …………… device |
| A. | non-linear |
| B. | bilateral |
| C. | linear |
| D. | none of the above |
| Answer» B. bilateral | |
| 219. |
When the crystal current diode current is large, the bias is ………… |
| A. | forward |
| B. | inverse |
| C. | poor |
| D. | reverse |
| Answer» B. inverse | |
| 220. |
When the graph between current through and voltage across a device is a straight line, the device is referred to as ………………. |
| A. | linear |
| B. | active |
| C. | nonlinear |
| D. | passive |
| Answer» B. active | |
| 221. |
The knee voltage of a crystal diode is approximately equal to …………. |
| A. | applied voltage |
| B. | breakdown voltage |
| C. | forward voltage |
| D. | barrier potential |
| Answer» E. | |
| 222. |
If the doping level of a crystal diode is increased, the breakdown voltage…………. |
| A. | remains the same |
| B. | is increased |
| C. | is decreased |
| D. | none of the above |
| Answer» D. none of the above | |
| 223. |
The PIV rating of a crystal diode is ………….. that of equivalent vacuum diode |
| A. | the same as |
| B. | lower than |
| C. | more than |
| D. | none of the above |
| Answer» C. more than | |
| 224. |
If the temperature of a crystal diode increases, then leakage current …….. |
| A. | remains the same |
| B. | decreases |
| C. | increases |
| D. | becomes zero |
| Answer» D. becomes zero | |
| 225. |
The leakage current in a crystal diode is due to ……………. |
| A. | minority carriers |
| B. | majority carriers |
| C. | junction capacitance |
| D. | none of the above |
| Answer» B. majority carriers | |
| 226. |
The ratio of reverse resistance and forward resistance of a germanium crystal diode is about …………. |
| A. | 1 : 1 |
| B. | 100 : 1 |
| C. | 1000 : 1 |
| D. | 40,000 : 1 |
| Answer» E. | |
| 227. |
An ideal crystal diode is one which behaves as a perfect ………..when forward biased. |
| A. | conductor |
| B. | insulator |
| C. | resistance material |
| D. | none of the above |
| Answer» B. insulator | |
| 228. |
The d.c. resistance of a crystal diode is ………….. its a.c. resistance |
| A. | the same as |
| B. | more than |
| C. | less than |
| D. | none of the above |
| Answer» D. none of the above | |
| 229. |
A crystal diode is used as …………… |
| A. | an amplifier |
| B. | a rectifier |
| C. | an oscillator |
| D. | a voltage regulator |
| Answer» C. an oscillator | |
| 230. |
The forward voltage drop across a silicon diode is about ………………… |
| A. | 2.5 V |
| B. | 3 V |
| C. | 10 V |
| D. | 0.7 V |
| Answer» E. | |
| 231. |
The reverse current in a diode is of the order of ………………. |
| A. | kA |
| B. | mA |
| C. | μA |
| D. | A |
| Answer» D. A | |
| 232. |
If the arrow of crystal diode symbol is positive w.r.t. bar, then diode is ………….. biased. |
| A. | forward |
| B. | reverse |
| C. | either forward or reverse |
| D. | none of the above |
| Answer» B. reverse | |
| 233. |
A crystal diode has forward resistance of the order of …………… |
| A. | kΩ |
| B. | Ω |
| C. | MΩ |
| D. | none of the above |
| Answer» C. MΩ | |
| 234. |
A crystal diode has ……… |
| A. | one pn junction |
| B. | two pn junctions |
| C. | three pn junctions |
| D. | none of the above |
| Answer» B. two pn junctions | |